Dielectric thin film and electronic component

Abstract

A dielectric thin film containing MgO as a main component, wherein the dielectric thin film is composed of a columnar structure group containing at least one columnar structure A constructed by single crystal and at least one columnar structure B constructed by polycrystal, respectively, and in the cross section of the direction perpendicular to the dielectric thin film, when the area occupied by the columnar structure A is set as CA and the area occupied by the columnar structure B is set as CB, the relationship between CA and CB satisfies 0.4≤CB/CA≤1.1.

Dependencies are inferred from the claim text.