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US 10,121,575 B2Granted
Thin film resistor
AssigneeNational Pingtung University of Science and Technology
InventorYing-Chieh Lee
Life of this patent
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Abstract
A thin film resistor includes 38-60 at.% of nickel, 10-25 at.% of chromium, 3-10 at.% of manganese, 4-18 at.% of yttrium, and 1-36 at.% of dysprosium. The thin film resistor can greatly increase the resistivity with a low temperature coefficient of resistance to broaden the applications of the thin film resistor.
Claims10
A thin film resistor comprising 38-60 at.% of nickel, 10-25 at.% of chromium, 3-10 at.% of manganese, 4-18 at.% of yttrium, and 1-36 at.% of at least one of lanthanide elements.
Dependencies are inferred from the claim text.