Designing method of semiconductor device and semiconductor device
AssigneeSocionext Inc.
InventorTetsuo Ashizawa
Life of this patent
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AssigneeSocionext Inc.
InventorTetsuo Ashizawa
Estimating the term…
A memory circuit with a built-in memory BIST circuit is created by: arranging a block of a clock pulse generator and a plurality of blocks of input/output circuits each corresponding to each of inputted/outputted bits adjacently in a first direction; arranging a block of a BIST pattern generator of the memory BIST circuit which is laid out so that signal wiring is connected by being arranged adjacently and performs generation of a test pattern, adjacently to the block of the clock pulse generator in a second direction; and arranging a plurality of blocks of comparators of the memory BIST circuit which are laid out so that signal wirings are connected by being arranged adjacently and compare an output value and an expected value, adjacently to the plurality of blocks of the input/output circuits in the second direction with the same pitch as that of the input/output circuits.
A semiconductor device comprising a memory circuit with a memory built-in self test circuit therein,
Dependencies are inferred from the claim text.