Wear-limiting non-volatile memory

A method for storing data in a non-volatile memory device, the non-volatile memory device including a non-volatile memory and a controller, the controller including a first circuit and a second circuit, the method comprising:

• receiving, by the controller, a write request,
• selecting, by the controller, one of the first circuit and the second circuit and completing the write request using the selected one of the first circuit and the second circuit,
• wherein completing the write request with the first circuit includes determining a physical address for a least used page in the non-volatile memory, and causing data associated the write request to be written to the least used page, and
• wherein completing the write request with the second circuit includes determining a physical address for a page in the non-volatile memory where the data associated with the write request was last stored, identifying cells of the data that have changed, and causing only those cells of the data that have changed to be written to the page where the data was last stored, wherein any data that is stored in the non-volatile memory is organized into pages, each page including a plurality of cells, wherein the first circuit includes a wear-leveling circuit and the second circuit includes a wear-limiting circuit.

A non-transitory computer-readable medium having instructions stored thereon, which when executed by at least one controller cause the at least one controller to perform a method, comprising:

• receiving a write request,
• selecting one of a second circuit and a first circuit and completing the write request using the selected one of the first circuit and the second circuit,
• wherein completing the write request with the first circuit includes determining a physical address for at least used page in a non-volatile memory, and causing data associated the write request to be written to the least used page, and
• wherein completing the write request with the second circuit includes determining a physical address for a page in the non-volatile memory where the data associated with the write request was last stored, identifying cells of the data that have changed, and causing only those cells of the data that have changed to be written to the page where the data was last stored, wherein any data that is stored in the non-volatile memory is organized into pages, each page including a plurality of cells, wherein the first circuit includes a wear-leveling circuit and the second circuit includes a wear-limiting circuit.