Nonvolatile memories and reading methods thereof

A nonvolatile memory (NVM), comprising:

• a first array bank and a second array bank, each including a plurality of memory cells, wherein the first array bank is coupled to a first bit-line, and the second array bank is coupled to a second bit-line;
• a pre-charging circuit;
• a first selection circuit, wherein, in response to an address enable signal to pre-charge the first bit-line and the second bit-line, the first selection circuit is configured to connect a first output terminal of the pre-charging circuit to the first bit-line and a second output terminal of the pre-charging circuit to the second bit-line, and in response to an address enable signal to disable pre-charging the first bit-line and the second bit-line, the first selection circuit is configured to disconnect the first bit-line from the first output terminal of the pre-charging circuit and the second bit-line from the second output terminal of the pre-charging circuit;
• a sense amplifier, including a first input terminal to receive a first voltage from the first output terminal of the pre-charging circuit and a second input terminal to receive a second voltage from the second output terminal of the pre-charging circuit, and configured to compare the first voltage with the second voltage to obtain a result indicating data information stored in the first array bank or in the second array bank;
• and
• a second selection circuit, configured to connect a reference current to the first input terminal or the second input terminal of the sense amplifier based on a first word-line signal and a second word-line signal.