Semiconductor memory device
AssigneeSK hynix Inc.
InventorHee Youl Lee
Life of this patent
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Abstract
Provided herein is a semiconductor memory device including a memory cell array including a drain select transistor and a plurality of memory cells, a voltage generator configured to apply a program voltage, first and second pass voltages, and a drain control voltage to the memory cell array, a control logic configured to control the voltage generator so that during a program operation, after the program voltage is applied to a selected one of the plurality of memory cells, the program voltage applied to the selected memory cell is discharged while the first pass voltage or the second pass voltage is applied to memory cells adjacent to the selected memory cell.
Claims5
A semiconductor memory device, comprising:
- a memory cell array including a plurality of memory cells and a drain select transistor;
- a voltage generator configured to apply a program voltage or a pass voltage to word lines of the memory cell array;
- and
- a control logic configured to control the voltage generator so that after the program voltage is applied to the word lines, a potential of even ones of the word lines and a potential of odd ones of the word lines are alternately discharged.
Dependencies are inferred from the claim text.