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US 10,121,544 B2Granted
Connecting memory cells to a data line sequentially while applying a program voltage to the memory cells
AssigneeMicron Technology, Inc.
InventorsQiang Tang, Ramin Ghodsi, Toru Tanzawa
Life of this patent
Estimating the term…
Abstract
Programming methods include applying a voltage to a selected access line commonly connected to a plurality of memory cells, and, while the voltage applied to the selected access line remains at a program voltage without being discharged, electrically connecting a subset of the plurality of memory cells to one data line so that only one memory cell of the subset of the plurality of memory cells is electrically connected to the one data line at a time.
Claims20
A programming method, comprising:
- applying a voltage to a selected access line commonly connected to control gates of a plurality of memory cells, wherein each memory cell of the plurality of memory cells is contained in a respective string of series-connected memory cells of a plurality of strings of series-connected memory cells;
- and
- while the voltage applied to the selected access line remains at a program voltage without being discharged, electrically connecting a subset of the plurality of memory cells to one data line so that only one memory cell of the subset of the plurality of memory cells is electrically connected to the one data line at a time;
- wherein the subset of the plurality of memory cells comprises more than one memory cell.
1 more element
A programming method, comprising:
- applying a program voltage to a selected access line commonly connected to control gates of a plurality of memory cells, wherein each memory cell of the plurality of memory cells is contained in a respective string of series-connected memory cells of a plurality of strings of series-connected memory cells;
- and
- while the voltage applied to the selected access line remains at the program voltage without being discharged, sequentially electrically connecting a subset of the plurality of memory cells to one data line, each for a respective period of time, so that only one memory cell of the subset of the plurality of memory cells is electrically connected to the one data line at a time.
A programming method, comprising:
- applying a program voltage to a selected access line commonly connected to control gates of a plurality of memory cells, wherein each memory cell of the plurality of memory cells is contained in a respective string of series-connected memory cells of a plurality of strings of series-connected memory cells;
- and
- while the voltage applied to the selected access line remains at the program voltage without being discharged, sequentially electrically connecting a subset of the plurality of memory cells to one data line, each for a respective period of time, so that only one memory cell of the subset of the plurality of memory cells is electrically connected to the one data line at a time;
- wherein sequentially electrically connecting the subset of the plurality of memory cells to the one data line comprises:
- electrically connecting one memory cell of the subset of the plurality of memory cells to the one data line during its respective period of time while electrically isolating each remaining memory cell of the subset of the plurality of memory cells from the one data line;
- and
- electrically isolating that one memory cell of the subset of the plurality of memory cells from the one data line after its respective period of time and before electrically connecting any other memory cell of the subset of the plurality of memory cells to the one data line for its respective period of time.
4 more elements
Dependencies are inferred from the claim text.