Storage device including a nonvolatile memory device and a controller for controlling a write operation of the nonvolatile memory device and an operating method of the storage device

A storage device, comprising:

• a random access memory;
• a nonvolatile memory device comprising a plurality of cell strings arranged on a substrate, each of the cell strings comprising a ground selection transistor, memory cells, and a string selection transistor stacked in a direction perpendicular to the substrate;
• and
• a controller configured to simultaneously perform a common write operation with a plurality of pages of the nonvolatile memory device using data collected on the random access memory and then, control the nonvolatile memory device such that an individual write operation is sequentially performed with each of the plurality of pages, and
• wherein in the nonvolatile memory device, memory cells which are disposed between a string selection line and a ground selection line, are connected in common to a word line, correspond to a plurality of bit lines, and are disposed at a same height from the substrate constitute a page,
• wherein, in the common write operation, first and second memory cells of a first page are programmed to first and second states, respectively, and third and fourth memory cells of a second page are programmed to the first and second states, respectively,
• wherein, in the individual write operations, the first and second memory cells are maintained at the first and second states, respectively, and the third and fourth memory cells are programmed to third and fourth states, respectively.

An operating method of a storage device which comprises a nonvolatile memory device and a controller configured to control the nonvolatile memory device, the method comprising:

• collecting a first data group and a second data group, by the controller;
• transmitting to the nonvolatile memory device a third data group generated from the first data group and the second data group, by the controller;
• simultaneously performing a common write operation with first and second pages using the third data group, by the nonvolatile memory device;
• transmitting the first data group to the nonvolatile memory device, by the controller;
• performing an individual write operation with the first page using the first data group, by the nonvolatile memory device, wherein the individual write operation with the first page is performed after the common write operation with the first page;
• transmitting the second data group to the nonvolatile memory device, by the controller;
• and
• performing an individual write operation with the second page using the second data group, by the nonvolatile memory device,
• wherein, in each of the first page and the second page;
• memory cells connected to the same bit line are programmed to a same program state in the common write operation and,
• first memory cells connected to the same bit line are not programmed again and second memory cells connected to the same bit line are programmed to different program states in the individual write operations.