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US 10,121,500 B2Granted
Magnetic tunnel junction (MTJ) free layer damping reduction
AssigneeWestern Digital Technologies, Inc.
InventorsZheng Gao, James Mac Freitag
Life of this patent
Estimating the term…
Abstract
In one embodiment, a system includes a sensor, the sensor having a free layer, a ferromagnetic spin sink layer spaced from the free layer, the spin sink layer being operative to reduce a spin-induced damping in the free layer during operation of the sensor, and a nonmagnetic spacer layer positioned between the free layer and the spin sink layer, the spacer layer having a long spin-diffusion length.
Claims20
A magnetic sensor comprising:
- a spin sink layer to reduce damping in a free layer of the magnetic sensor;
- a spacer layer between the free layer and the spin sink layer;
- and
- a spin reflective layer separated from the spacer layer by the spin sink layer.
1 more element
A magnetic sensor comprising:
- a spin sink layer to reduce damping in a free layer of the magnetic sensor;
- a nonmagnetic spacer layer between the spin sink layer and the free layer;
- a cap layer separated from the nonmagnetic spacer layer by the spin sink layer;
- and
- a top shield separated from the spin sink layer by the cap layer.
2 more elements
A magnetic recording device comprising:
- a magnetic sensor comprising:
- a free layer;
- a spin sink layer;
- a nonmagnetic spacer layer between the spin sink layer and the free layer;
- and
- a spin reflective layer separated from the spacer layer by the spin sink layer.
3 more elements
Dependencies are inferred from the claim text.