Electronic device and method for fabricating the same

A method for fabricating an electronic device comprising a semiconductor memory, comprising:

• providing a substrate in which a first region and a second region are defined;
• forming an interlayer dielectric layer having a first conductive pattern and a second conductive pattern, over the substrate, wherein the first conductive pattern is located at the first region and has a planarized top surface with the interlayer dielectric layer, and the second conductive pattern is located at the second region and includes at least a portion recessed below a top surface of the interlayer dielectric layer;
• forming a variable resistance layer over the interlayer dielectric layer to cover the first conductive pattern and the second conductive pattern;
• forming a capping layer including a non-metallic material which prevents a penetration of a wet chemical, over the variable resistance layer;
• forming a mold layer over the capping layer;
• forming a hard mask pattern in a portion of the mold layer corresponding to the first region;
• removing at least a portion of the mold layer;
• and
• etching the capping layer and the variable resistance layer using the hard mask pattern.