Method of controlling temperature of non-volatile storage device

A method of controlling a temperature of a non-volatile storage device, the non-volatile storage device comprising a substrate and a memory controller, a volatile memory, and a non-volatile memory that are mounted on the substrate, the method comprising:

• detecting a temperature at predetermined time intervals by using a temperature measuring sensor and sending a temperature value to the memory controller;
• and
• controlling, by using the memory controller, a speed of a write/read operation with respect to the non-volatile memory based on the temperature value,
• wherein the controlling of the speed of the write/read operation with respect to the non-volatile memory comprises:
• setting the write/read speed to a maximum value if the temperature is less than or equal to a control engagement temperature, and
• applying at least one of (a), (b), and (c) according to Formula 2 below if the temperature is higher than the control engagement temperature,
• P
• =
• P
• max
• ×
• f
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• (
• Δ
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• T
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• b
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• (
• 2
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• (a) reducing a number of data I/O channels;
• (b) reducing a number of data I/O ways;
• and
• (c) decreasing a speed of a data write/read operation with respect to the non-volatile memory,
• wherein P denotes a data I/O performance level,
• Pmax denotes a maximum data I/O performance level of the non-volatile storage device,
• ΔT denotes a difference between the temperature of the non-volatile storage device and a reference temperature, and
• ΔTb denotes a difference between a maximum threshold temperature of the non-volatile storage device and the reference temperature, wherein ΔTb is greater than zero,
• wherein the temperature measuring sensor is disposed on a surface of or adjacent to at least one of the memory controller, the volatile memory, the non-volatile memory, and the substrate.

A method of controlling a temperature of a non-volatile storage device, the non-volatile storage device comprising a substrate;

• and a memory controller, a volatile memory, and a non-volatile memory that are mounted on the substrate, the method comprising:
• setting a data I/O performance level to a maximum level;
• detecting the temperature of the non-volatile storage device using a temperature measuring sensor disposed on a surface of or adjacent to at least one of the memory controller, the volatile memory, the non-volatile memory, and the substrate;
• determining whether the temperature of the non-volatile storage device is higher than a control engagement temperature;
• and
• adjusting the data I/O performance level to a value lower than the maximum level if the temperature of the non-volatile storage device is higher than the control engagement temperature, or keeping the data I/O performance level at the maximum level if the temperature of the non-volatile storage device is equal to or lower than the control engagement temperature,
• wherein the non-volatile storage device includes a NAND memory, and
• the adjusting of the data I/O performance level comprises controlling a speed of a write/read operation with respect to the non-volatile storage device by using a Tprog function, in order to control data I/O speed.