Memory system of optimal read reference voltage and operating method thereof

An apparatus of a memory system comprising:

• a memory devices;
• and
• a controller, coupled with the memory devices, configured to:
• determine a range for obtaining an optimal read reference voltage for reading data from a memory cell in the memory device based on a voltage distribution of the memory cell, the range being defined by a lower most voltage and an upper most voltage;
• calculate the optimal read reference voltage within the range based on the lower most voltage and the upper most voltage;
• and
• execute an error correction process, achieving an rBER in accordance with the optimal read reference voltage.

A memory system, comprising:

• a processor;
• a tangible computer readable storage medium coupled to the processor, embedding a non-transitory computer program product for execution by the processor, including computer instructions configured to:
• determine a range for obtaining an optimal read reference voltage for reading data from a memory cell in the memory device based on a voltage distribution of the memory cell, the range being defined by a lower most voltage and an upper most voltage;
• calculate the optimal read reference voltage within the range based on the lower most voltage and the upper most voltage;
• and
• execute an error correction process, achieving an rBER in accordance with the optimal read reference voltage.