US 10,120,405 B2 · Single-junction voltage reference

Abstract

A single semiconductor-based junction may be used to create a voltage reference, and temperature compensate the voltage reference, by time-multiplexing the voltage reference between different current drive levels. That is, the value of the current driven through the single junction may be repeatedly varied in a recurring manner. In case the junction is a zener diode, the current may be repeatedly switched between forward and reverse directions. As long as the temperature coefficients (in ppm/° C.) of the different voltages developed responsive to the different currents across the junction are different, a weighting of the different voltage values yield a zero temperature coefficient voltage reference value. To implement a bandgap reference, a single diode-connected bipolar junction transistor may alternately be forward-biased using a first current and at least a second current. A weighting of the (at least) two resulting Vbe (base-emitter voltage) drops may yield a zero temperature coefficient bandgap voltage.

Claims18

Dependent claims

A method for implementing a temperature compensated reference voltage using a single semiconductor junction, the method comprising:

obtaining a set of voltage values, comprising obtaining one or more first voltage values and one or more second voltage values, wherein each of the one or more first voltage values is representative of a first voltage developed across a single semiconductor junction (SSJ), and each of the one or more second voltage values is representative of a second voltage developed across the SSJ, said obtaining comprising alternately applying:
a first current to the SSJ to develop the first voltage;
and
a second current to the SSJ to develop the second voltage;
varying a temperature of the SSJ over a temperature range during said obtaining the set of voltage values;
and
determining one or more parameters based on the one or more first voltage values and the one or more second voltage values, wherein the one or more parameters are parameters of a function of the first voltage and the second voltage, wherein the function yields a temperature compensated voltage value of a reference voltage derived from the SSJ.

4 more elements

A voltage reference comprising:

a single semiconductor junction (SSJ);
and
circuitry coupled to the SSJ and configured to:
obtain a set of voltage values, wherein to obtain the set of voltage values, the circuitry is configured to alternately apply one or more times:
a first current to the SSJ to develop a first voltage across the SSJ;
and
a second current to the SSJ to develop a second voltage across the SSJ;
wherein the set of voltage values comprises one or more first voltage values and one or more second voltage values, wherein each first voltage value of the one or more first voltage values is representative of the first voltage for a respective application of the first current to the SSJ, and each second voltage value of the one or more second voltage values is representative of the second voltage for a respective application of the second current to the SSJ;
vary a temperature of the SSJ over a temperature range during the course of obtaining the set of voltage values;
and
determine one or more parameters based on the one or more first voltage values and the one or more second voltage values, wherein the one or more parameters are parameters of a function of the first voltage and the second voltage, wherein the function yields a temperature compensated voltage value of the voltage reference.

8 more elements

Dependencies are inferred from the claim text.

Single-junction voltage reference

Life of this patent

Single-junction voltage reference

Life of this patent

Abstract

Claims18