Particle irradiation apparatus, beam modifier device, and semiconductor device including a junction termination extension zone

A particle irradiation apparatus, comprising:

• a particle source configured to emit particles;
• an acceleration unit configured to accelerate the emitted particles to form a particle beam;
• and
• a beam modifier device configured to receive the particle beam, the beam modifier comprises:
• scattering portions at a patterned surface and in which particles vertically impinging on an exposure surface of the beam modifier device are deflected from a vertical direction, wherein the patterned surface and the exposure surface are surfaces opposite to each other;
• and
• shading portions at the patterned surface in which a permeability for the particles is lower than in the scattering portions, wherein the shading Portions and the scattering portions alternate on an individual basis along a lateral direction parallel to the exposure surface, and an area ratio of each successive shading portion changes along the lateral direction, wherein the area ratio is an area of the patterned surface occupied by a respective shading portion per unit area,
• wherein each of the scattering portions has a different permeability such that the permeability for the particles changes along the lateral direction parallel to the exposure surface with respect to each scattering portion.

A method of manufacturing a semiconductor device, the method comprising:

• generating a particle beam;
• and
• modifying the particle beam by use of a beam modifier device, wherein shading portions of the beam modifier device attenuate first partial beams of the particle beam and scattering portions of the beam modifier device scatter second partial beams of the particle beam, wherein cones of the second partial beams passing through neighboring ones of the scattering portions overlap in a semiconductor substrate in a plane perpendicular to a propagation direction of the particle beam,
• wherein an area ratio of each successive shading portion changes along the lateral direction, where the area ratio is an area of the patterned surface occupied by a respective shading portion per unit area, and
• wherein each of the scattering portions has a different permeability such that permeability for the particle beam changes along the lateral direction with respect to each scattering portion.