Array substrate and manufacturing method thereof

An array substrate, comprising:

• a glass substrate;
• a gate electrode mounted on the glass substrate;
• a first insulating layer deposited on the glass substrate and the gate electrode;
• a semiconductor layer mounted on the first insulating layer and positioned on a top of the gate electrode;
• a planarization layer mounted on the first insulating layer;
• a source electrode mounted on the planarization layer and the semiconductor layer;
• a drain electrode mounted on the planarization layer and the semiconductor layer;
• a pixel electrode layer mounted on the planarization layer and the drain electrode;
• a second insulating layer mounted on the planarization layer, the semiconductor layer, the source electrode and the drain electrode;
• wherein the semiconductor layer includes:
• an amorphous silicon layer deposited on the first insulating layer;
• and
• a doped semiconductor layer mounted on the amorphous silicon layer;
• the drain electrode has a side surface which is away from one side of the source electrode and is inclined towards the source electrode, and the pixel electrode layer covers the side surface.

A manufacturing method of an array substrate, comprising steps of:

• mounting a gate electrode on a glass substrate;
• depositing a first insulating layer on the glass substrate and the gate electrode;
• depositing a semiconductor layer on the first insulating layer, wherein the semiconductor layer is disposed on a top of the gate electrode;
• mounting a pianarization layer on the first insulating layer;
• mounting a source electrode on the planarization layer and the semiconductor layer;
• mounting a drain electrode on the planarization layer and the semiconductor layer;
• mounting a pixel electrode layer on the planarization layer and the drain electrode;
• and
• depositing a second insulating layer on the planarization layer, the semiconductor layer, the source electrode and the drain electrode, wherein the drain electrode has a side surface which is away from one side of the source electrode and is inclined towards the source electrode, and the pixel electrode layer covers the side surface.