US 10,120,099 B2 · Rugged semiconductor radiation detector

Abstract

Devices and methods for a rugged semiconductor radiation detector are provided. The semiconductor detector may include a hermetically sealed housing and a semiconductor disposed within the housing that has a first surface and a second surface opposite one another. A first metallization layer may at least partially cover the first surface of the semiconductor and a second metallization layer may at least partially cover the second surface of the semiconductor. The first metallization layer or the second metallization layer, or both, do not extend completely to an edge of the semiconductor, thereby providing a nonconductive buffer zone. This reduces electrical field stresses that occur when a voltage potential is applied between the first metallization layer and the second metallization layer and reduces a likelihood of electrical failure (e.g., due to arcing).

Claims20

Dependent claims

A semiconductor detector comprising:

a hermetically sealed housing;
a semiconductor disposed within the housing, the semiconductor having a first surface and a second surface, wherein the first surface is opposite the second surface;
a first metallization layer at least partially covering the first surface of the semiconductor;
and
a second metallization layer at least partially covering the second surface of the semiconductor;
wherein the first metallization layer or the second metallization layer, or both, do not extend completely to an edge of the semiconductor, thereby providing a nonconductive buffer zone between the edge of the semiconductor and the first metallization layer or the second metallization layer, or both, and thereby reducing electrical field stresses that occur when a voltage potential is applied between the first metallization layer and the second metallization layer and thereby reducing a likelihood of electrical failure due to arcing.

3 more elements

A method for logging a well comprising:

placing a downhole tool in a wellbore in a geological formation;
emitting radiation from the downhole tool into the geological formation;
and
detecting radiation emitted from the downhole tool using a rugged semiconductor radiation detector, wherein the rugged semiconductor radiation detector comprises:
a semiconductor disposed within a hermetically sealed housing, the semiconductor having a first surface and a second surface, wherein the first surface is opposite the second surface, and wherein the first surface has a first metallization layer at least partially covering the first surface and the second surface has a second metallization layer at least partially covering the second surface;
an electrode plate disposed within the housing and configured to receive a supply voltage;
and
a conductive adhesive and support structure at least partially covering the second metallization layer and at least partially covering the electrode plate, wherein the conductive adhesive and support structure is configured to attach the second metallization layer to the electrode plate and provide the supply voltage to the second metallization layer, wherein the supply voltage and another voltage applied to the first metallization layer provide a voltage potential between the first metallization layer and the second metallization layer;
wherein:
the conductive adhesive and support structure does not extend completely to an edge of the second metallization layer, thereby providing a first nonconductive buffer zone between the edge of the second metallization layer and an edge of the conductive adhesive and support structure, thereby reducing electrical field stresses that occur when the voltage potential is applied between the first metallization layer and the second metallization layer via the conductive adhesive and support structure;
or
the conductive adhesive and support structure provides a space between the second metallization layer and the electrode plate, thereby providing a second nonconductive buffer zone between at least part of the second metallization layer and the electrode plate, thereby reducing electrical field stresses that occur when the voltage potential is applied between the first metallization layer and the second metallization layer via the conductive adhesive and support structure;
or
both.

11 more elements

A downhole device comprising:

a radiation source configured to emit ionizing radiation or nuclear radiation, or both, into a geological formation;
one or more radiation detectors configured to detect the emitted radiation or radiation that results after interactions between the emitted radiation and the geological formation, wherein the one or more radiation detectors comprise a rugged semiconductor radiation detector, wherein the rugged semiconductor radiation detector comprises:
a semiconductor disposed within a hermetically sealed housing, the semiconductor having a first surface and a second surface, wherein the first surface is opposite the second surface, and wherein the first surface has a first metallization layer at least partially covering the first surface and the second surface has a second metallization layer at least partially covering the second surface, wherein the first metallization layer or the second metallization layer, or both, do not extend completely to an edge of the semiconductor, thereby providing a nonconductive buffer zone between the edge of the semiconductor and the first metallization layer or the second metallization layer, or both, and thereby reducing electrical field stresses that occur when a voltage potential is applied between the first metallization layer and the second metallization layer.

Dependencies are inferred from the claim text.

Rugged semiconductor radiation detector

Life of this patent

Rugged semiconductor radiation detector

Life of this patent

Abstract

Claims20