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US 10,119,671 B2Granted
Light emitting device and vehicular lamp including the same
AssigneeSeoul Semiconductor Co., Ltd.
InventorsYang Sik Cho, Yoon Seop Lee, Dae Wook Kim, Da Hye Kim
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Abstract
The present disclosure relates to a light-emitting device and a vehicular lamp including the same. The light-emitting device may include a light-emitting unit and a sidewall. The light emitting unit may include a light-emitting element. The sidewall may surround a side of the light-emitting unit and adjoin the side of the light-emitting unit. The light-emitting element may include at least two light-emitting cells grown on a single growth substrate and may be electrically connected to one another.
Claims19
A vehicular lamp comprising:
- a combination lamp;
- and
- a main lamp,
- wherein at least one of the combination lamp and the main lamp comprises:
- a light emitting unit;
- a sidewall surrounding a side surface of the light emitting unit and adjoining the side surface thereof;
- and
- a substrate disposed at a lower side of the light emitting unit and supporting the light emitting unit and the sidewall,
- wherein the light emitting unit comprises:
- a light emitting element comprising at least two light emitting cells;
- a wavelength converter disposed on the light emitting element and covering at least part of an upper surface of the light emitting element;
- a first pad electrode electrically connected to at least one of the light emitting cells;
- and
- a second pad electrode electrically connected to the other light emitting cell,
- wherein the sidewall has a protruding portion formed at an edge thereof,
- wherein the substrate comprises a base and first and second electrodes electrically connected to an external electrode to supply electric power to the light emitting unit, the first electrode and the second electrode being at least partially exposed,
- wherein the at least two light emitting cells are electrically connected to each other and each comprise an n-type semiconductor layer, a p-type semiconductor layer, and an active layer interposed between the n-type semiconductor layer and the p-type semiconductor layer.
14 more elements
Dependencies are inferred from the claim text.