Method for producing SiC single crystal

A method for producing a SIC single crystal, the method comprising:

• a formation step of forming a Si—C solution by melting material for the Si—C solution contained in a crucible,
• a first growth step of bringing a first SiC seed crystal attached to a bottom end of a seed shaft into contact with the Si—C solution and growing a first SIC single crystal on a crystal growth surface of the first SiC seed crystal, wherein
• in the first growth step, while a temperature of the Si—C solution is being raised, the first SiC single crystal is grown,
• a preparation step of preparing the first SIC single crystal;
• and
• a second growth step of using the first SiC single crystal as a second seed crystal and growing a second SiC single crystal on a crystal growth surface of the second SiC seed crystal by a sublimation-recrystallization technique or a high-temperature CVD technique.