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AssigneeSiltronic AG
InventorsKurt Niederer, Helmut Teroerde, Josef Berger, Goetz Meisterernst, Frank Muemmler, Simon Zitzelsberger
Estimating the term…
A growing single crystal is supported in the region of a conical section of the single crystal via a supporting body during crystallization of the single crystal by the FZ method. The method comprises pressing the supporting body against the conical section of the growing single crystal at a temperature at which a first material of the supporting body becomes soft, and continuing pressing the supporting body against the conical section of the growing single crystal until the first material and a second material of the supporting body that remains hard at the cited temperature touch the conical section of the growing single crystal.
A method of supporting a growing single crystal in the region of a conical section of the single crystal via a supporting body during crystallization of the single crystal as prepared by the FZ method, comprising pressing a supporting body against the conical section of the growing single crystal at a temperature at which a first material of the supporting body becomes soft, and continuing pressing the supporting body against the conical section of the growing single crystal until the first material and a second material of the supporting body that remains hard at the cited temperature touch the conical section of the growing single crystal.
Dependencies are inferred from the claim text.