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US 10,087,522 B2Granted
Deposition of metal borides
AssigneeASM IP Holding B.V.
InventorsPetri Raisanen, Eric Shero, Suvi Haukka, Robert Brennan Milligan, Michael Eugene Givens
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Abstract
A method for depositing a metal boride film onto a substrate is disclosed. In particular, the method comprises pulsing a metal halide precursor onto the substrate and pulsing a boron compound precursor onto the substrate. A reaction between the metal halide precursor and the boron compound precursor forms a metal boride film. Specifically, the method discloses forming a tantalum boride (TaB2) or a niobium boride (NbB2) film.
Claims21
A method of forming a metal boride comprising:
- providing a substrate for processing in a reaction chamber;
- performing a metal halide precursor deposition onto the substrate, the performing the metal halide precursor deposition step comprises:
- pulsing a metal halide precursor comprising at least one of niobium tetrafluoride (NbF4) and niobium pentafluoride (NbF5) onto the substrate;
- and
- purging an excess of the metal halide precursor from the reaction chamber;
- and
- performing a borane compound precursor deposition onto the substrate, the performing the borane compound precursor deposition step comprises:
- pulsing a borane compound precursor onto the substrate;
- and
- purging an excess of the borane compound precursor from the reaction chamber;
- wherein the metal halide precursor comprises a niobium halide;
- wherein a reaction between the metal halide precursor and the borane compound precursor forms a niobium boride film;
- wherein the metal halide precursor deposition step is repeated a predetermined number of times;
- and
- wherein the borane compound precursor deposition step is repeated a predetermined number of times.
12 more elements
A method of forming a metal boride work function layer comprising:
- providing a substrate for processing in a reaction chamber;
- performing a metal halide precursor deposition onto the substrate, the performing the metal halide precursor deposition step comprises:
- pulsing a metal halide precursor onto the substrate;
- and
- purging an excess of the metal halide precursor from the reaction chamber;
- and
- performing a borane compound precursor deposition onto the substrate, the performing the borane compound precursor deposition step comprises:
- pulsing a borane compound precursor onto the substrate;
- and
- purging an excess of the borane compound precursor from the reaction chamber;
- wherein the metal halide precursor comprises one of:
- tantalum pentafluoride (TaF5), niobium tetrafluoride (NbF4), or niobium pentafluoride (NbF5);
- and
- wherein a reaction between the metal halide precursor and the borane compound precursor forms a metal boride comprising at least one of:
- tantalum boride (TaB2) or niobium boride (NbB2).
12 more elements
Dependencies are inferred from the claim text.