Nano-electromechanical system (NEMS) device structure and method for forming the same

A nano-electromechanical system (NEMS) device structure, comprising:

• a transistor formed on a substrate;
• a first conductive layer formed over the transistor, wherein the first conductive layer comprises a first portion and a second portion;
• a dielectric layer formed over the first conductive layer;
• a first supporting electrode formed in and extended above the dielectric layer, wherein the first supporting electrode is electrically connected to the first portion of the first conductive layer;
• a second supporting electrode formed in and extended above the dielectric layer, wherein the second supporting electrode is electrically connected to the second portion of the first conductive layer;
• a beam structure formed over the first supporting electrode and the second supporting electrode, wherein the beam structure comprises a plurality of strip structures, each of the plurality of strip structures extends from the first supporting electrode to the second supporting electrode, a first cavity is constructed by the first supporting electrode, the beam structure and the second supporting electrode;
• and
• a thin film formed on the first supporting electrode, the second supporting electrode and the beam electrode.

A nano-electromechanical system (NEMS) device structure, comprising:

• a transistor formed on a substrate;
• a dielectric layer formed over the transistor;
• a first supporting electrode formed in and extended above the dielectric layer;
• a second supporting electrode formed in and extended above the dielectric layer;
• a plurality of strip-shaped beam structures connecting the first supporting electrode and the second supporting electrode, wherein each of the plurality of strip-shaped beam structures extends from the first supporting electrode to the second supporting electrode, a first cavity is constructed by the first supporting electrode, the beam structure and the second supporting electrode;
• and
• a cap structure formed over the beam structure, wherein a second cavity is formed between the cap structure and the beam structure and the second cavity surrounds the first cavity.