Abstract
A method of manufacturing an electronic device comprises forming a wiring material layer made of aluminum or an aluminum alloy on the surface of an insulating film on a substrate, patterning the wiring material layer by a reactive ion etching treatment with a resist pattern used as a mask so as to form a wiring, and treating the surface of the insulating film including the wiring with an aqueous solution for removing the etching residue, the aqueous solution containing a peroxosulfate, a fluorine-containing compound and an acid for adjusting the pH value and having a pH value of −1 to 3.
Key facts
- Application
- 10/389,981Filed 18 Mar 2003
- Priority
- JP 2002-08705026 Mar 2002
- Published
- US 2003/0192859 A116 Oct 2003
- Granted
- 28 Mar 2006
- Term ends
- Not estimatedThe source records don’t support an estimate.
Classification13 codes
- H10P 70/273
During, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers: the processing being a delineation of…
- H10D 30/0314
Characterised by the gate electrodes: of lateral top-gate TFTs comprising only a single gate
- H10D 30/0321
Of thin-film transistors [TFT]: comprising silicon, e.g. amorphous silicon or polysilicon
- H10D 30/6739
Characterised by the electrode materials: conductor-insulator-semiconductor electrodes
Family
- US 2003/0192859 A1Pre-grant publication · published 16 Oct 2003
- US 7,018,552 B2This patent
From the US filing history. Foreign family members aren’t listed.