Testing circuitry in a stacked semiconductor device using through silicon vias

A method of producing a tested semiconductor device comprising:

• forming a semiconductor device;
• and
• testing the semiconductor device, the testing including:
• stacking a first wafer onto a second wafer having the semiconductor device such that a first electrode formed on the first wafer is connected with a second electrode formed on the second wafer, the first electrode penetrating the first wafer, the second electrode penetrating the second wafer and being coupled electrically with the semiconductor device;
• and
• supplying a test signal to the first electrode of the first wafer to input the test signal into the semiconductor device via the first electrode and the second electrode.

A method of producing a semiconductor device comprising:

• stacking a plurality of semiconductor chips, wherein each of the plurality of semiconductor chips has already been tested by a testing method, the testing method including;
• stacking a first wafer onto a second wafer comprising the semiconductor chip such that a first electrode formed on the first wafer is connected with a second electrode formed on the second wafer, the first electrode penetrating the first wafer, the second electrode penetrating the second wafer and being connected electrically with the semiconductor chip;
• and
• supplying a test signal to the first electrode of the first wafer to input the test signal into the semiconductor chip via the first electrode and the second electrode.

A system comprising:

• a plurality of stacked chips;
• and
• a controller for controlling the stacked chips,
• wherein each of the stacked chips comprises:
• a substrate having a first surface and a second surface opposite the first surface;
• a plurality of TSVs penetrating the substrate from the first surface to the second surface;
• a test pad connected to a first TSV of the plurality of TSVs;
• and
• a circuit connected to the first TSV of the plurality of TSVs;
• and
• wherein the plurality of TSVs are connected in common with each of the plurality of stacked chips;
• and
• wherein the controller selectively enables a first circuit on a first stacked chip of the plurality of stacked chips to output data to the first TSV.