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US RE49,831 E1Granted
3D semiconductor memory device
AssigneeSK hynix Inc.
InventorsKi Hong Lee, Seung Ho Pyi, Seok Min Jeon
Life of this patent
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Abstract
Provided herein a semiconductor device including a stack including conductive layers and insulating layers that are alternately stacked, and a slit insulating layer passing through the stack in a stacking direction, the slit insulating layer including a first main pattern extending in a first direction, and a first protruding pattern protruding in a second direction crossing the first direction at an end of the first main pattern.
Claims22
A semiconductor device comprising:
- a stack comprising conductive layers and insulating layers that are alternately stacked;
- and
- a slit insulating layer passing through the stack in a stacking direction, an upper flat surface of the slit insulating layer comprising a first main pattern having a first edge and a second edge extending in a first direction, a first protruding pattern protruding from the first edge at a one end of the first main pattern in a second direction crossing the first direction, a second protruding pattern protruding from the second edge at the one end of the first main pattern in the second direction, a third protruding pattern protruding from the first edge at the other end of the first main pattern in the second direction, and a fourth protruding pattern protruding from the second edge at the other end of the first main pattern in the second direction,
- wherein a lower flat surface of the slit insulating layer has a shape in which a center thereof and an end thereof have substantially the same width,
- wherein a cross-sectional area of the lower flat surface of the slit insulating layer is less than that of the upper flat surface of the slit insulating layer.
2 more elements
A semiconductor device comprising:
- a source structure;
- conductive layers stacked on the source structure;
- channel layers passing through the conductive layers and coupled to the source structure;
- and
- a slit insulating layer passing through the conductive layers in a stacking direction, and including an upper surface having a shape in which an end thereof is extended in width, and a lower surface having a uniform width so that a center thereof and an end thereof have substantially the same width,
- wherein an area of the lower surface is smaller than that of the upper surface.
3 more elements
A semiconductor device comprising:
- a stack comprising conductive layers and insulating layers that are alternately stacked;
- and
- a slit insulating layer passing through the stack in a stacking direction, an upper flat surface of the slit insulating layer comprising a first main pattern having a first edge and a second edge extending in a first direction, a first protruding pattern protruding from the first edge at a one end of the first main pattern in a second direction crossing the first direction, a second protruding pattern protruding from the second edge at the one end of the first main pattern in the second direction, a third protruding pattern protruding from the first edge at the other end of the first main pattern in the second direction, and a fourth protruding pattern protruding from the second edge at the other end of the first main pattern in the second direction,
- wherein a lower flat surface of the slit insulating layer has a shape in which a center portion thereof and an end portion thereof have substantially the same width, and
- wherein at least one of the first to fourth protruding patterns of the upper flat surface decreases in size towards the lower flat surface.
2 more elements
A semiconductor device comprising:
- a source structure;
- conductive layers stacked on the source structure;
- channel layers passing through the conductive layers and coupled to the source structure;
- and
- a slit insulating layer passing through the conductive layers in a stacking direction, and including an upper surface having a shape in which an end portion thereof is extended in width, and a lower surface having a uniform width so that a center portion thereof and an end portion thereof have substantially the same width,
- wherein an area of the lower surface is smaller than that of the upper surface.
3 more elements
Dependencies are inferred from the claim text.