Memory controller, storage device and method for adjusting a data input/output speed of the controller based on internal and external temperature information

A storage device comprising:

• a plurality of memory devices;
• and
• an external temperature sensor configured to generate an external temperature information by sensing a temperature of the respective memory device;
• and
• a memory controller configured to:
• control the plurality of memory devices, and control operational performance a data input/output speed of the memory controller using an internal temperature information and the external temperature information, wherein the internal temperature information represents a temperature of the memory controller,
• wherein the memory controller is configured to
• generate a correction value representing a difference value between the internal temperature information and the external temperature information,
• togenerate an adjusted temperature information in which the correction value is applied to the internal temperature informationand,
• to updatingupdate the correction value when a number of erase-write cycles (EW cycles) of the memory device exceeds a threshold number, and
• determine whether to adjust the data input/output speed of the memory controller based on the adjusted temperature information.

A method of operating a storage device, the storage device including a plurality of memory devices and a memory controller for controlling the memory devices, the method comprising:

• obtaining, when a write request for the plurality of memory devices is inputted, internal temperature information representing a temperature of the memory controller;
• generating, when the storage device boots, a correction value based on the internal temperature information and an external temperature information representing a temperature of the respective memory devices;
• generating an adjusted temperature information by applying the correction value to the internal temperature information;
• adjusting operational performance a data input/output speed of the memory controller using the adjusted temperature information and a pre-stored critical temperature information;
• and
• updating the correction value in response to an update enable signal which is generated when a number of erase-write cycles (EW cycles) of the memory device exceeds a threshold number.