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US RE48,774 E1Granted
Semiconductor light emitting device
AssigneeSuzhou Lekin Semiconductor Co., Ltd.
InventorHwan Hee Jeong
Life of this patent
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Abstract
Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a plurality of compound semiconductor layers including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer; a pad on the plurality of compound semiconductor layers; an electrode layer under the plurality of compound semiconductor layers; and a supporting member disposed under the plurality of compound semiconductor layers and corresponding to the pad.
Claims44
A semiconductor light emitting device comprising:
- a light emitting structure having:
- a first conductive semiconductor layer;
- a second conductive semiconductor layer above the first conductive semiconductor layer;
- an active layer between the first and second conductive semiconductor layer;
- an insulating layer on an upper surface of the second conductive semiconductor layer;
- an electrode layer on the upper surface of the second conductive semiconductor layer;
- a metal layer on the electrode layer;
- and
- an upper metal layer on a top surface of the metal layer,
- wherein the insulating layer includes a first region on the upper surface of the second conductive semiconductor layer, a second region on the upper surface of the second conductive semiconductor layer spaced apart from the first region, a first protrusion protruded from the first region, and a second protrusion protruded from the second region,
- wherein the first and second protrusions extend from the upper surface of the second conductive semiconductor layer to at least an upper portion of the first conductive semiconductor layer so as to be spaced apart in the light emitting structure,
- wherein the electrode layer is disposed between the first region and the second region of the insulating layer,
- wherein a first portion of the second conductive semiconductor layer is disposed between the first and second protrusions,
- wherein a first portion of the active layer is disposed between the first and second protrusions,
- wherein the first protrusion includes a first inclined surface contacting the first portion of the second conductive semiconductor layer and the first portion of the active layer,
- wherein the second protrusion includes a second inclined surface contacting the first portion of the second conductive semiconductor layer and the active layer,
- wherein an interval between the first and second inclined surfaces is greater than an interval between the first and second regions,
- wherein bottom surfaces of the first protrusion and the second protrusion are vertically overlapped with a bottom surface of the first conductive semiconductor layer,
- wherein bottom portions of the first protrusion and the second protrusion are disposed in the first conductive semiconductor layer and are located at a lower position than a top surface of the first conductive semiconductor layer,
- wherein the metal layer is disposed between the electrode layer and the upper metal layer,
- wherein an entire bottom surface of the electrode layer is located at a higher position than a bottom surface of the second conductive semiconductor layer,
- wherein a center portion of a bottom surface of the electrode layer is located at a position of the same height of a horizontal top surface of the second conductive semiconductor layer,
- wherein the electrode layer disposed between the first region and the second region of the insulating layer contacts the second conductive semiconductor layer,
- wherein the metal layer contacts the electrode layer,
- wherein the metal layer is electrically connected to the electrode layer,
- wherein the bottom portions of the first and second protrusions disposed in the first conductive semiconductor layer are not overlapped with an entire region of the metal layer in a vertical direction, and
- wherein the entire region of the metal layer is overlapped with the bottom surface of the first conductive semiconductor layer in the vertical direction.
24 more elements
A semiconductor light emitting device comprising:
- a conductive support member;
- a light emitting structure on the conductive support member including a first conductive semiconductor layer, a second conductive semiconductor layer and an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;
- an electrode disposed between the light emitting structure and the conductive support member;
- and
- an insulation layer disposed between the light emitting structure and the conductive support member,
- wherein the insulation layer includes a protrusion passing through the second conductive semiconductor layer and the active layer so as to be in contact with the first conductive semiconductor layer,
- wherein the protrusion separates the light emitting structure into an active region and a non-active region,
- wherein the electrode is electrically connected to the second conductive semiconductor layer in the active region,
- wherein the electrode is electrically disconnected to the second conductive semiconductor layer in the non-active region,
- wherein the second conductive semiconductor layer in the non-active region vertically overlaps with the electrode,
- wherein an entire bottom surface of the electrode is located at a higher position than a bottom surface of the second conductive semiconductor layer, and
- wherein a center portion of a bottom surface of the electrode is located at a position of the same height of a horizontal top surface of the second conductive semiconductor layer.
9 more elements
A semiconductor light emitting device comprising:
- a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer, an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer;
- and
- an electrode electrically connected to the light emitting structure,
- wherein the light emitting structure includes an active region, and a non-active region,
- wherein the second conductive semiconductor layer in the non-active region is separated from the second conductive semiconductor layer in the active region,
- wherein the electrode includes a contact portion electrically connected to the active region, and an extended portion extended from the contact portion to an outermost side surface of the light emitting structure,
- wherein the extended portion is electrically disconnected to the second conductive semiconductor layer in the non-active region,
- wherein the extended portion overlaps with the non-active region vertically,
- wherein an entire bottom surface of the electrode is located at a higher position than a bottom surface of the second conductive semiconductor layer, and
- wherein a center portion of a bottom surface of the electrode is located at a position of the same height of a horizontal top surface of the second conductive semiconductor layer.
7 more elements
Dependencies are inferred from the claim text.