# US RE46,136 E1 · Heating apparatus with enhanced thermal uniformity and method for making thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US RE46,136 E1 - Document ID: USRE46136E1 - Status: Granted - Kind: E1 - Application number: 13/790,423 - Filed: 2013-03-08 - Granted: 2016-09-06 - Earliest claimed: 2006-09-19 - Assignees: Momentive Performance Materials Inc. - Applicants: Momentive Performance Materials Inc. - Inventors: John Mariner; Ajit Sane; Toshiki Ebata; Marc Schaepkens; Xiang Liu; Wei Fan - Web page: https://patentgrep.com/patent/USRE46136E1 ## CPC - C23C 16/4586: {Elements in the interior of the support, e.g. electrodes, heating or cooling devices} - H01L 21/67103 - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H01L ## Abstract A heating apparatus for regulating/controlling the surface temperature of a substrate is provided. At least a thermal pyrolytic graphite (TPG) layer is embedded in the heater to diffuse the temperature difference of the various components in the heating apparatus and provide temporal and spatial control of the surface temperature of the substrate, for a relatively uniform substrate temperature with the difference between the maximum and minimum temperature points on the substrate of less than 10° C. ## Claims ### Claim 1 An apparatus for supporting a substrate in a process chamber and regulating the surface temperature of the substrate, the apparatus comprising: a base support having a surface adapted to support the substrate; a heating element for heating the substrate to a temperature of at least 300° C.; at least one layer of thermal pyrolytic graphite material embedded in the base support, the thermal pyrolytic graphite (TPG) layer having a thermal conductivity of at least 1000 W/m° C. in a plane parallel to the substrate being supported; wherein the surface of the base support has a maximum temperature variation of 10° C. between a lowest point and a highest temperature point on the surface of the base support; and further wherein, the base support for supporting the wafer comprises a base metal substrate comprising at least one of copper, aluminum, and alloys thereof; the at least a layer of thermal pyrolytic graphite is embedded in the metal base substrate; the heating element for heating the substrate to a temperature of at least 300° C. is embedded in the metal base substrate, under the thermal pyrolytic graphite layer and away from the wafer substrate. ### Claim 2 An apparatus for supporting a substrate in a process chamber and regulating the surface temperature of the substrate, the apparatus comprising: a base support having a surface adapted to support the substrate; a cooling element disposed in the base support a heating element for heating the substrate to a temperature of at least 300° C.; at least one layer of thermal pyrolytic graphite material embedded in the base support, the thermal pyrolytic graphite (TPG) layer having a thermal conductivity of at least 1000 W/m° C. in a plane parallel to the substrate being supported; wherein the surface of the base support has a maximum temperature variation of 10° C. between a lowest point and a highest temperature point on the surface of the base support, and further wherein the base support for supporting the wafer substrate comprises a base metal substrate comprising at least one of copper, aluminum, and alloys thereof; the heating element is sandwiched between two dielectric layers for heating the substrate to a temperature of at least 300° C. and disposed on the metal base substrate, the at least a layer of thermal pyrolytic graphite is embedded in the metal base substrate, under the heating element and dielectric layers, and away from the wafer substrate. ### Claim 3 (depends on 1) The apparatus of claim 1 further comprising a cooling element disposed in the base support. ### Claim 4 (depends on 1) The apparatus of claim 1, wherein the cooling element comprises a plurality of coolant passages. ### Claim 5 (depends on 4) The apparatus of claim 4, wherein a coolant supplied by a coolant supplier flows through the plurality of coolant passages, thereby cooling the base support and the substrate supported by the base support. ### Claim 6 (depends on 2) The apparatus of claim 2, wherein the cooling element comprises a plurality of coolant passages. ### Claim 7 (depends on 6) The apparatus of claim 6, wherein a coolant supplied by a coolant supplier flows through the plurality of coolant passages, thereby cooling the base support and the substrate supported by the base support. ### Claim 8 An apparatus for supporting a substrate in a process chamber and regulating the surface temperature of the substrate, the apparatus comprising: (a) a base support having a surface adapted to support the substrate, the base support comprising at least one of copper, aluminum, and alloys thereof; (b) an element to regulate the temperature of the substrate chosen from (i) a heating element for heating the substrate to a temperature of at least 300° C., wherein the heating element is embedded in the base support, (ii) a cooling element disposed in the base support, or (iii) both (i) and (ii); at least one layer of thermal pyrolytic graphite material embedded in the base support, the thermal pyrolytic graphite (TPG) layer having a thermal conductivity of at least 1000 W/m° C. in a plane parallel to the substrate being supported; wherein the surface of the base support has a maximum temperature variation of 10° C. between a lowest point and a highest temperature point on the surface of the base support. ### Claim 9 (depends on 8) The apparatus of claim 8, wherein the element to regulate the temperature of the substrate is a cooling element. ### Claim 10 (depends on 9) The apparatus of claim 9, wherein the cooling element comprises a plurality of coolant passages. ### Claim 11 (depends on 9) The apparatus of claim 9, wherein a coolant supplied by a coolant supplier flows through the plurality of coolant passages, thereby cooling the base support and the substrate supported by the base support. ### Claim 12 (depends on 9) The apparatus of claim 9, wherein the at least one layer of thermal pyrolytic graphite is disposed between the cooling element and the surface of the base support. ### Claim 13 (depends on 8) The apparatus of claim 8, wherein the element to regulate the temperature of the substrate is a cooling element and a heating element. ### Claim 14 (depends on 13) The apparatus of claim 13, wherein the cooling element comprises a plurality of coolant passages. ### Claim 15 (depends on 13) The apparatus of claim 13, wherein a coolant supplied by a coolant supplier flows through the plurality of coolant passages, thereby cooling the base support and the substrate supported by the base support. ### Claim 16 (depends on 13) The apparatus of claim 13, wherein the at least one layer of thermal pyrolytic graphite is disposed between the surface of the base support and the cooling and heating elements. ### Claim 17 (depends on 16) The apparatus of claim 16, wherein the heating element is disposed between the at least one layer of thermal pyrolytic graphite and the cooling element. ### Claim 18 (depends on 8) The apparatus of claim 8 comprising a heating element.