US RE45,973 E1Granted

Semiconductor optical amplifier

AssigneesSony Corporation, Tohoku University

InventorsMasaru Kuramoto, Masao Ikeda, Rintaro Koda, Tomoyuki Oki, Hideki Watanabe, Takao Miyajima, Hiroyuki Yokoyama

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Abstract

A semiconductor optical amplifier includes: a laminated structure sequentially including a first compound semiconductor layer composed of GaN compound semiconductor and having a first conductivity type, a third compound semiconductor layer having a light amplification region composed of GaN compound semiconductor, and a second compound semiconductor layer composed of GaN compound semiconductor and having a second conductivity type; a second electrode formed on the second compound semiconductor layer; and a first electrode electrically connected to the first compound semiconductor layer. The laminated structure has a ridge stripe structure. When widths of the ridge stripe structure in a light output end face and the ridge stripe structure in a light incident end face are respectively Wout, and Win, Wout>Win is satisfied. A carrier non-injection region is provided in an internal region of the laminated structure from the light output end face along an axis line of the semiconductor optical amplifier.

Claims23

Dependent claims

A semiconductor optical amplifier comprising:

a laminated structure including (i) a first compound semiconductor layer that has a first conductivity type and is composed of GaN compound semiconductor, (ii) a second compound semiconductor layer that has a second conductivity type different from the first conductivity type and is composed of GaN compound semiconductor, and (iii) a third compound semiconductor layer that has a light amplification region composed of GaN compound semiconductor, the first compound semiconductor layer, the third compound semiconductor layer, and the second compound semiconductor layer being sequentially layered;
a second electrode on the second compound semiconductor layer;
and
a first electrode electrically connected to the first compound semiconductor layer,
wherein,
the laminated structure has a ridge stripe structure,
when a width of the ridge stripe structure in a light output end face is Wout, and a width of the ridge stripe structure in a light incident end face is Win, Wout>Win is satisfied, and
a carrier non-injection region is provided in the laminated structure, the carrier non-injection region extending from the light output end face of the ridge stripe structure and towards the light incident end face of the ridge stripe structure along an axis line of the semiconductor optical amplifier, the first, second, and third compound semiconductor layers being present in the carrier non-injection region, and the second electrode not being present in the carrier non-injection region.

5 more elements

A light output device comprising:

a laser;
a semiconductor optical amplifier that amplifies light output by the laser;
a light isolator between the laser and the semiconductor optical amplifier;
a mirror between the light isolator and the semiconductor optical amplifier;
a half-wave plate between the mirror and the semiconductor optical amplifier;
and
a lens between the half-wave plate and the semiconductor optical amplifier,
wherein,
(1) the semiconductor optical amplifier comprises
(a) a laminated structure including (i) a first compound semiconductor layer that has a first conductivity type and is composed of GaN compound semiconductor, (ii) a second compound semiconductor layer that has a second conductivity type different from the first conductivity type and is composed of GaN compound semiconductor, and (iii) a third compound semiconductor layer that has a light amplification region composed of GaN compound semiconductor, the first compound semiconductor layer, the third compound semiconductor layer, and the second compound semiconductor layer are sequentially layered,
(b) a second electrode on the second compound semiconductor layer, and
(c) a first electrode electrically connected to the first compound semiconductor layer,
(2) the laminated structure has a ridge stripe structure, and
(3) a carrier non-injection region is provided in the laminated structure, the carrier non-injection region extending from the light output end face of the ridge stripe structure and towards the light incident end face of the ridge stripe structure along an axis line of the semiconductor optical amplifier, the first, second, and third compound semiconductor layers being present in the carrier non-injection region, and the second electrode not being present in the carrier non-injection region.

11 more elements

Dependencies are inferred from the claim text.

Facts

Application: 14/614,652Filed 5 Feb 2015 · reissue
Priority: JP P2010-14934530 Jun 2010
Granted: 12 Apr 2016
Term ends: Not estimatedThe source records don’t support an estimate.

Classification5 codes

H01S 5/1064
Comprising an active region having a varying composition or cross-section in a specific direction: varying width along the optical axis
H01S 5/16
Construction or shape of the optical resonator , e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or…:…
H01S 5/32341
Emitting light at a wavelength less than 900 nm: blue laser based on GaN or GaP
H01S 5/50
Semiconductor lasers: amplifier structures not provided for in groups H01S5/02 - H01S5/30