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US RE45,361 E1Granted
Semiconductor device manufacturing method having high aspect ratio insulating film
AssigneePS4 Luxco S.a.r.l.
InventorToshiyuki Hirota
Life of this patent
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Abstract
The object of the present invention is to embed an insulating film in a hole having a high aspect ratio and a small width without the occurrence of a void. The thickness of a polishing stopper layer is reduced by making separate layers respectively serve as a mask during forming the hole in a semiconductor substrate, and a stopper during removing the insulating film filled in the hole.
Claims20
A semiconductor device manufacturing method comprising:
- preparing a semiconductor substrate;
- forming a thermally oxidized film on the semiconductor substrate by thermally-oxidizing the surface of the semiconductor substrate;
- forming a polishing stopper layer on the thermally oxidized film;
- forming a hard mask A by patterning a hard mask material after forming the hard mask material on the polishing stopper layer;
- forming a trench in the polishing stopper layer, the thermally oxidized film and the semiconductor substrate, by etching the polishing stopper layer, the thermally oxidized film and the semiconductor substrate using the hard mask A;
- wherein at least a portion of the hard mask A remains on the polishing stopper layer after the trench is formed in the semiconductor substrate;
- removing the hard mask A;
- forming a thermally oxidized film in a part where the semiconductor substrate is exposed, by thermally-oxidizing the semiconductor substrate;
- forming an insulating film on the whole surface;
- removing the insulating film by CMP using the polishing stopper layer as a stopper;
- and
- removing the polishing stopper layer.
9 more elements
A semiconductor device manufacturing method comprising:
- (a) forming a hard mask by patterning a hard mask material that overlies a polishing stopper layer that in turn overlies a first layer;
- (b) forming a trench in the polishing stopper layer and the first layer, by etching the polishing stopper layer and the first layer through the hard mask, and wherein the hard mask continues to cover the polishing stopper layer after the trench is formed in the first layer;
- (c) removing the hard mask;
- (d) forming a second layer to fill the trench in the first layer and to cover adjacent regions of the semiconductor device;
- and
- (e) removing portions of the second layer outside of the trench in the first layer by CMP using the polishing stopper layer as a stopper.
3 more elements
A semiconductor device manufacturing method comprising:
- preparing a semiconductor substrate;
- forming a thermally oxidized film on the semiconductor substrate by thermally-oxidizing the surface of the semiconductor substrate;
- forming a polishing stopper layer on the thermally oxidized film;
- forming a hard mask A by patterning a hard mask material after forming the hard mask material on the polishing stopper layer;
- forming a trench in the polishing stopper layer, the thermally oxidized film and the semiconductor substrate, by etching the polishing stopper layer, the thermally oxidized film and the semiconductor substrate using the hard mask A;
- wherein at least a portion of the hard mask A remains on the polishing stopper layer after the trench is formed in the semiconductor substrate;
- removing the hard mask A;
- forming an insulating film on the whole surface;
- removing the insulating film by CMP using the polishing stopper layer as a stopper;
- and
- removing the polishing stopper layer.
8 more elements
Dependencies are inferred from the claim text.