Method for polishing a semiconductor wafer
AssigneeSiltronic AG
InventorsClemens Zapilko, Thomas Jaeschke, Makoto Tabata, Klaus Roettger
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Abstract
Semiconductor wafers are CMP polished by polishing the rear side of the semiconductor wafer by means of CMP with a material removal with a profile along the diameter of the wafer wherein material removal is higher at the center than at the edge of the rear side; and polishing the front side of the wafer by means of CMP with a material removal with a profile along the diameter of the wafer wherein material removal is lower in the center of the front side than in an edge region of the front side.
Claims15
A method for polishing a semiconductor wafer having a front side and a rear side, comprising:
- polishing the rear side of the semiconductor wafer by means of CMP with a material removal with a profile along the diameter of the semiconductor wafer according to which material removal is higher in a center region of the rear side than in an edge region of the rear side, wherein the material removal is 0.2 to 0.8 μm in the center region of the rear side and is 0.02 to 0.2 μm lower in the edge region of the rear side;
- and
- polishing the front side of the semiconductor wafer by means of CMP with a material removal with a profile along the diameter of the semiconductor wafer according to which material removal is lower in a center region of the front side than in an edge region of the front side, wherein the material removal is 0.2 to 0.8 μm in the center region of the front side and is 0.02 to 0.2 μm higher in the edge region of the frontside;
- and
- polishing the semiconductor wafer by means of DSP, wherein the DSP is carried out before polishing the rear side of the semiconductor wafer by means of CMP.
Dependencies are inferred from the claim text.