Method of verifying programming of a nonvolatile memory device
AssigneeSK hynix Inc.
InventorSeung Hwan Baik
Life of this patent
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Abstract
A first verify voltage is applied to a word line of a selected memory cell, after a bit line is precharged, to program-verify the memory cell in a nonvolatile memory device. A first read evaluation operation for changing a voltage of the bit line is performed. Results of the first read evaluation operation are sensed using a first sensing voltage. A second read evaluation operation for changing the voltage of the bit line is performed again. Results of the second read verify operation are then sensed using the first sensing voltage.
Claims35
A method of verifying programming of a selected memory cell of a nonvolatile memory device, the method comprising:
- precharging a bit line;
- a first sensing step of applying a first verify voltage to a word line of the selected memory cell, performing a first read evaluation operation for changing a voltage of the bit line, and sensing results of the first read evaluation operation using a first sensing voltage;
- and
- a second sensing step of, after the first sensing step, performing a second read evaluation operation for changing the a voltage of the bit line, and sensing results of the second read evaluation operation using the first a second sensing voltage.
A method of verifying programming of a selected memory cell of a nonvolatile memory device, the method comprising:
- precharging a bit line;
- applying a first verify voltage to a word line of the selected memory cell and performing a read evaluation operation for changing a voltage of the bit line;
- and
- sensing results of the read evaluation operation using a first sensing voltage and a second sensing voltage.
A method of verifying programming of a nonvolatile memory device, the method comprising:
- precharging a bit line;
- applying a first verify voltage to a word line of a selected memory cell;
- performing a first read evaluation operation for changing a voltage of the bit line;
- first sensing results of the first read evaluation operation using a first sensing voltage;
- performing a second read evaluation operation for changing the a voltage of the bit line;
- and
- second sensing results of the second read evaluation operation using the first a second sensing voltage.
A method of operating a nonvolatile memory device, the method comprising:
- performing a first verify operation comprising:
- precharging a bit line coupled to a selected memory cell;
- performing an evaluation operation on the bit line;
- and
- sensing a result of the evaluation operation;
- and
- performing a second verify operation without resetting and precharging the bit lines.
Dependencies are inferred from the claim text.