Manufacturing process of thin film transistor
AssigneeIntellectual Ventures Fund 82 LLC
InventorsMin-Ching Hsu, Yung-Lung Mo
Life of this patent
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Abstract
A thin film transistor includes a gate, a gate insulator layer, a channel layer, a source, a drain, and an ohmic contact layer. The gate insulator layer covers the gate; the channel layer is disposed on the gate insulator layer above the gate; the source and the drain are disposed on the channel layer; the ohmic contact layer is disposed between the channel layer and the source and drain. The ohmic contact layer is constituted by a number of film layers. As mentioned above, the thin film transistor has an ohmic contact layer constituted by a number of film layers. When the thin film transistor is turned off, the current leakage thereof is lowered than that of a conventional thin film transistor.
Claims10
A manufacturing process of a thin film transistor, comprising:
- forming a gate on a substrate;
- forming a gate insulator layer on the substrate to cover the gate;
- forming a channel layer on the gate insulator layer over the gate;
- forming an ohmic contact layer on the channel layer, wherein the ohmic contact layer is constituted by a plurality of N-doped amorphous silicon layers;
- and
- forming a source and a drain on the ohmic contact layer, wherein the ohmic contact layer is located between the source and the drain is removed.
A manufacturing process of a thin film transistor, comprising:
- forming a gate on a substrate;
- forming a gate insulator layer on the substrate to cover the gate;
- forming a channel layer on the gate insulator layer over the gate;
- forming an ohmic contact layer on the channel layer, wherein the ohmic contact layer is constituted by a plurality of N-doped amorphous silicon layers;
- and
- forming a source and a drain on the ohmic contact layer, wherein at least a portion of the ohmic contact layer located between the source and the drain is removed.
Dependencies are inferred from the claim text.