Mixed composition interface layer and method of forming

An electronic device comprising:

• a capacitor plate with a conductive first layer comprising a first chemical element;
• a capacitor dielectric with an insulative second layer comprising a second chemical element different from the first chemical element;
• and
• an interface layer between and in contact with the first and second layers, the interface layer comprising the first and second chemical elements, not substantially comprising material originating from the first or second layers, and providing a composition gradient across a thickness of the interface layer such that a first ratio of the first chemical element to the second chemical element in the interface layer proximate the first layer is greater than a second ratio of the first chemical element to the second chemical element in the interface layer proximate the second layer.

An electronic device comprising:

• a capacitor plate with a conductive first layer comprising a first chemical element;
• a capacitor dielectric with an insulative second layer comprising a second chemical element different from the first chemical element;
• and
• an interface layer between and in contact with the first and second layers, the interface layer comprising the first and second chemical elements, not substantially comprising material originating from the first or second layers, providing a composition gradient across a thickness of the interface layer, and comprising at least one monolayer of intermixed first and second chemical elements chemisorbed on the first layer.

A capacitor comprising:

• a first capacitor plate comprising a first chemical element;
• a first portion of at least one monolayer chemisorbed on the first plate, the first portion comprising the first chemical element;
• a second portion of the at least one monolayer chemisorbed on the first plate, the second portion comprising a second chemical element different from the first chemical element;
• an interface layer comprising the first and second portions of the at least one monolayer;
• a dielectric layer comprising the second chemical element on the interface layer;
• and
• a second capacitor plate over the dielectric layer.

An electronic device comprising:

• a conductive first layer comprising a metal containing Pt and/or Ru;
• an insulative second layer comprising Ta;
• and
• an interface layer between and in contact with the first and second layers, the interface layer comprising the metal and Ta, not substantially comprising material originating from the first or second layers, and providing a composition gradient across a thickness of the interface layer such that a first ratio of the metal to Ta in the interface layer proximate the first layer is greater than a second ratio of the metal to Ta in the interface layer proximate the second layer.

A capacitor comprising:

• a first conductive plate over a semiconductor substrate, the first plate comprising a first metal;
• an interface layer in contact with the first plate, the interface layer comprising at least one monolayer of the first metal intermixed with a second metal which is different from the first metal;
• a dielectric layer comprising the second metal on and in contact with the interface layer, the interface layer being disposed between the first plate and the dielectric layer such that the interface layer adheres to both the dielectric layer and the first plate;
• and
• a second conductive plate over the dielectric layer.

A capacitor comprising:

• a first conductive layer comprising a first chemical element;
• a first portion of at least one monolayer on the first conductive layer, the first portion comprising the first chemical element;
• a second portion of the at least one monolayer on the first conductive layer, the second portion comprising a second chemical element different from the first chemical element;
• an interface layer comprising the first and second portions of the at least one monolayer;
• a dielectric layer comprising the second chemical element on the interface layer;
• and
• a second conductive layer over the dielectric layer.

An electronic device comprising:

• a conductive first layer comprising a first chemical element;
• a dielectric second layer comprising a second chemical element different from the first chemical element;
• and
• an interface layer between and in contact with the first and second layers, the interface layer comprising the first and second chemical elements, and providing a composition gradient across a thickness of the interface layer such that a first ratio of the first chemical element to the second chemical element in the interface layer proximate the first layer is greater than a second ratio of the first chemical element to the second chemical element in the interface layer proximate the second layer.