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US RE42,139 E1Granted
Method of fabricating a semiconductor device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Hisashi Ohtani
Life of this patent
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Abstract
A semiconductor device with high reliability is provided using an SOI substrate. When the SOI substrate is fabricated by using a technique typified by SIMOX, ELTRAN, or Smart-Cut, a single crystal semiconductor substrate having a main surface (crystal face) of a {110} plane is used. In such an SOI substrate, adhesion between a buried insulating layer as an under layer and a single crystal silicon layer is high, and it becomes possible to realize a semiconductor device with high reliability.
Claims49
A semiconductor device comprising:
- a supporting substrate comprising single crystalline silicon;
- an insulating layer comprising silicon oxide at a surface of the supporting substrate;
- an island-like single crystalline semiconductor layer comprising silicon formed on an the insulating layercomprising silicon oxide over a supporting substrate , the single crystalline semiconductor layer having at least a channel formation region and source and drain regions;
- a gate insulating film formed on the single crystalline semiconductor layer;
- a gate electrode formed over the channel formation region with the gate insulating film interposed therebetween wherein the gate electrode includes a metal layer which contacts the gate insulating film;
- etching stoppers silicon oxide films formed on side surfaces of the gate electrode;
- side walls formed adjacent to the side surfaces of the gate electrode with the etching stoppers silicon oxide films interposed therebetween;
- and
- an insulating film comprising silicon nitride formed over the single crystalline semiconductor layer and the gate electrode,
- wherein the island-like single crystalline semiconductor layer comprises part of a single crystalline semiconductor substrate different from the supporting substrate.
7 more elements
A semiconductor device comprising:
- a supporting substrate comprising single crystalline silicon;
- an insulating layer comprising silicon oxide at a surface of the supporting substrate;
- an island-like single crystalline semiconductor layer comprising silicon formed on an the insulating layercomprising silicon oxide over a supporting substrate , the single crystalline semiconductor layer having at least a channel formation region and source and drain regions;
- a gate insulating film formed on the single crystalline semiconductor layer;
- a gate electrode comprising poly silicon formed over the channel formation region with the gate insulating film interposed therebetween;
- etching stoppers silicon oxide films formed on side surfaces of the gate electrode;
- side walls comprising silicon nitride formed adjacent to the side surfaces of the gate electrode with the etching stoppers silicon oxide films interposed therebetween, respectively;
- and
- an insulating film comprising silicon nitride formed over the single crystalline semiconductor layer and the gate electrode,
- wherein an upper surface of the gate electrode and at least a part of the source and drain regions comprise a metal silicide, and
- wherein the island-like single crystalline semiconductor layer comprises part of a single crystalline semiconductor substrate different from the supporting substrate.
8 more elements
A semiconductor device comprising:
- a supporting substrate comprising single crystalline silicon;
- an insulating layer at a surface of the supporting substrate;
- a single crystalline semiconductor layer comprising silicon formed on an the insulating layerover a supporting substrate , the single crystalline semiconductor layer having at least a channel formation region and source and drain regions;
- a gate insulating film formed on the single crystalline semiconductor layer;
- a gate electrode formed over the channel formation region with the gate insulating film interposed therebetween wherein the gate electrode includes a metal layer which contacts the gate insulating film;
- etching stoppers silicon oxide films formed on side surfaces of the gate electrode;
- side walls formed adjacent to the side surfaces of the gate electrode with the etching stoppers silicon oxide films interposed therebetween;
- and
- an insulating film comprising silicon nitride oxide formed over the single crystalline semiconductor layer and the gate electrode,
- wherein the single crystalline semiconductor layer comprises part of a single crystalline semiconductor substrate different from the supporting substrate.
7 more elements
A semiconductor device comprising:
- a supporting substrate comprising single crystalline silicon;
- an insulating layer at a surface of the supporting substrate;
- a single crystalline semiconductor layer comprising silicon formed on an the insulating layerover a supporting substrate , the single crystalline semiconductor layer having at least a channel formation region and source and drain regions;
- a gate insulating film formed on the single crystalline semiconductor layer;
- a gate electrode comprising poly silicon formed over the channel formation region with the gate insulating film interposed therebetween;
- etching stoppers silicon oxide films formed on side surfaces of the gate electrode;
- side walls comprising silicon nitride formed adjacent to the side surfaces of the gate electrode with the etching stoppers silicon oxide films interposed therebetween, respectively;
- and
- an insulating film comprising silicon nitride oxide formed over the single crystalline semiconductor layer and the gale electrode,
- wherein an upper surface of the gate electrode and at least a part of the source and drain regions comprise a metal silicide, and
- wherein the single crystalline semiconductor layer comprises part of a single crystalline semiconductor substrate different from the supporting substrate.
8 more elements
A semiconductor device comprising:
- a supporting substrate comprising single crystalline silicon;
- an insulating layer at a surface of the supporting substrate;
- a single crystalline semiconductor layer comprising silicon formed on an the insulating layer, the single crystalline semiconductor layer having at least a channel formation region and source and drain regions;
- a gate insulating film formed on the single crystalline semiconductor layer;
- a gate electrode formed over the channel formation region with the gate insulating film interposed therebetween;
- etching stoppers silicon oxide films formed on side surfaces of the gate electrode;
- side walls formed adjacent to the side surfaces of the gate electrode with the etching stoppers silicon oxide films interposed therebetween;
- a first insulating film formed over the single crystalline semiconductor layer and the gate electrode;
- a first electrode formed on the first insulating film and electrically connected to one of the source and drain regions;
- a second flattening insulating film formed over the first electrode and the first insulating film;
- a second electrode formed on the second flattening insulating film;
- and a third flattening insulating film formed over the second electrode and the second flattening insulating film,
- wherein the single crystalline semiconductor layer comprises part of a single crystalline semiconductor substrate different from the supporting substrate.
10 more elements
A semiconductor device comprising:
- a supporting substrate comprising single crystalline silicon;
- an insulating layer comprising silicon oxide at a surface of the supporting substrate;
- an island-like single crystalline semiconductor layer comprising silicon on the insulating layer, the island-like single crystalline semiconductor layer having at least a channel formation region and source and drain regions;
- a gate electrode comprising poly silicon formed over the channel formation region;
- silicon oxide films formed on side surfaces of the gate electrode;
- side walls comprising silicon nitride formed adjacent to the side surfaces of the gate electrode with the silicon oxide films interposed therebetween, respectively;
- and
- an insulating film comprising silicon nitride formed over the single crystalline semiconductor layer and the gate electrode,
- wherein an upper surface of the gate electrode and at least a part of the source and drain regions comprise a metal silicide, and
- wherein the single crystalline semiconductor layer comprises part of a single crystalline semiconductor substrate different from the supporting substrate.
7 more elements
A semiconductor device comprising:
- a supporting substrate comprising single crystalline silicon;
- an insulating layer comprising silicon oxide at a surface of the supporting substrate;
- a single crystalline semiconductor layer comprising silicon formed on the insulating layer, the single crystalline semiconductor layer having at least a channel formation region and source and drain regions;
- a gate electrode comprising poly silicon formed over the channel formation region;
- silicon oxide films formed on side surfaces of the gate electrode;
- side walls comprising silicon nitride formed adjacent to the side surfaces of the gate electrode with the silicon oxide films interposed therebetween, respectively;
- and
- an insulating film comprising silicon nitride oxide formed over the single crystalline semiconductor layer and the gate electrode,
- wherein an upper surface of the gate electrode and at least a part of the source and drain regions comprise a metal silicide, and
- wherein the single crystalline semiconductor layer comprises part of a single crystalline semiconductor substrate different from the supporting substrate.
7 more elements
Dependencies are inferred from the claim text.