Large area plasma source
AssigneeTokyo Electron Limited
InventorWayne L. Johnson
Life of this patent
Estimating the term…
Abstract
A chamber housing (2) enclosing a plasma region (20) in a large area plasma source used for performing plasma assisted processes in large area substrates, the chamber housing (2) being composed of: a housing member (2) constituting a substantially vertically extending wall (4) surrounding a space (6) corresponding to the plasma region (10), the housing member (2) having a plurality of openings (32) and electrically conductive elements forming an electrostatic shield around the space; a plurality of dielectric members (36) each having a peripheral edge and each disposed to close a respective opening (23); and sealing members (40, 40′, 42′) forming a hermetic seal between said housing member and said peripheral edge of each of said dielectric members (36).
Claims17
A chamber housing enclosing a plasma region in a large area plasma source used for performing plasma assisted processes on large area substrates, said chamber housing comprising:
- a housing member constituting a substantially vertically extending wall surrounding a space corresponding to the plasma region, said housing member having a plurality of openings, and electrically conductive elements forming an electrostatic shield around the space;
- a plurality of dielectric members each having a peripheral edge and each disposed to close a respective opening;
- and
- sealing means forming a hermetic seal between said housing member and said peripheral edge of each of said dielectric members;
- and
- a coil configured to generate an RF field that passes through said dielectric members to create a plasma in said plasma region, said coil being disposed outside of said electrostatic shield relative to said plasma region.
Dependencies are inferred from the claim text.