Method for making a wafer-pair having sealed chambers
AssigneeHoneywell International Inc.
InventorsR. Andrew Wood, Jeffrey A. Ridley, Robert E. Higashi
Life of this patent
Estimating the term…
Abstract
A method for fabricating a wafer-pair having at least one recess in one wafer and the recess formed into a chamber with the attaching of the other wafer which has a port plugged with a deposited layer on its external surface. The deposition of the layer may be performed in a very low pressure environment, thus assuring the same kind of environment in the sealed chamber. The chamber may enclose at least one device such as a thermoelectric sensor, bolometer, emitter or other kind of device. The wafer-pair typically will have numerous chambers, with devices, respectively, and may be divided into a multiplicity of chips.
Claims66
A method for making a wafer-pair having deposited layer plugged sealed chambers, comprising:
- growing a thermal layer on a first side of a first silicon wafer;
- depositing a nitride layer on the thermal layer;
- depositing, patterning and removing portions of first metal layer on the nitride layer for a plurality of devices;
- depositing, patterning and removing portions of a second metal layer on the nitride and first metal layers for the plurality of devices;
- patterning and removing material from the first silicon wafer and layers on the first side of the first silicon wafer and from a second side of the first silicon wafer to make a plurality of pump-out ports through the first silicon wafer and layers on the first silicon wafer;
- masking and removing material from a first side of a second silicon wafer to form a plurality of recesses in the first side of the second silicon wafer;
- forming a sealing ring on the first side of the second silicon wafer around each of the plurality of recesses;
- and
- positioning the first side of the first silicon wafer next to the first side of the second silicon wafer;
- and
- wherein:
- each sealing ring is in contact with at least one of the layers on the first side of the first silicon wafer;
- each recess of the plurality of recesses results in a chamber containing at least one device of the plurality of devices;
- each sealing ring encloses at least one pump-out port of the plurality of pump-out ports;
- and
- the first and second silicon wafers are effectively a bonded together set of wafers.
A method for making a wafer-pair having at least one deposited layer plugged sealed chamber, comprising:
- growing a first thermal layer on a first side of a first silicon wafer;
- depositing a nitride layer on the first thermal layer;
- depositing and patterning a first metal layer on the nitride layer for at least one device;
- depositing and patterning a second metal layer on the nitride layer and the first metal layer for the at least one device;
- patterning and removing material from the first silicon wafer and layers on the first side of the first silicon wafer and from a second side of the first silicon wafer to make a pump-out port through a first silicon wafer and the layers on the first silicon wafer;
- masking and removing material from a first side of a second silicon wafer, to form a recess in the first side of the second silicon wafer;
- forming a sealing ring on the first side of the second silicon wafer around the recess;
- and
- positioning the first side of the first silicon wafer next to the first side of the second silicon wafer;
- and
- wherein:
- the sealing ring is in contact with at least one of the layers on the first side of the first silicon layer;
- the at least one device is within the recess resulting in a chamber containing the at least one device;
- the pump-out port is within the sealing ring;
- and
- the first and second silicon wafers are effectively a bonded together set of wafers.
A method for making a wafer-pair having at least one deposited layer plugged sealed chamber, comprising:
- growing a first layer of thermal SiO2 on a first of a first silicon wafer;
- depositing a first layer of Si3N4 on the first layer of thermal SiO2;
- growing a second layer of thermal SiO2 on a second side of the first silicon wafer;
- depositing a second layer of Si3N4 on the second layer of thermal SiO2;
- depositing a layer of a first metal on the second layer of Si3N4;
- patterning the layer of the first metal;
- depositing a layer of a second metal on the layer of the first metal;
- patterning the layer of the second metal;
- depositing a third layer of Si3N4 on the layers of the first and second metals;
- etching at least one via through the third layer of Si3N4, the layers of the second and first metals, the second layer of Si3N4 and the second layer of thermal SiO2;
- etching a pump-out port through the first layer of SiO2 and a first portion of the silicon wafer proximate to the at least one via;
- etching within the at least one via through a second portion of the silicon wafer to the pump-out port;
- growing a third layer of thermal SiO2 on a first side of a second silicon wafer and a fourth layer of
- thermal SiO2 on a second side of the second silicon wafer;
- growing a fourth layer of Si3N4 on the third layer of thermal SiO2 and a fifth layer of Si3N4 on the fourth layer of SiO2;
- patterning and cutting the fourth layer Si3N4 and the third layer of thermal SiO2 for a bond pad area;
- etching a first portion of the second silicon wafer through the fourth Si3N4 layer and third SiO2 layer for the bond pad area;
- patterning and cutting the fifth layer of Si3N4 and fourth layer of thermal SiO2 for a recess area;
- etching a second portion from the second side of the second silicon wafer to form a recess;
- applying an optical coating to the second silicon wafer to substantially reduce reflections;
- applying a solder ring proximate to a perimeter of the recess, on the second side of the second silicon wafer;
- aligning the first silicon wafer with the second silicon wafer, having the first side of the first silicon wafer and the second side of the second silicon wafer face each other;
- putting the first and second silicon wafers in a vacuum;
- pressing the first and second silicon wafers together with a pressure;
- ramping the temperature of the silicon wafers up to a high temperature;
- increasing the pressure of the first and second silicon wafers against each other to bond the silicon wafers to each other;
- baking out the first and second silicon wafers;
- cooling down the first and second silicon wafers under a maintained vacuum;
- depositing a layer of a metal on the second side of the second silicon wafer to plug the pump-out port to seal the recess with a vacuum;
- and
- removing the bonded first and second silicon wafers from the vacuum.
A method for making a wafer-pair having deposited layer plugged sealed chambers, comprising:
- growing a thermal layer on a first side of a first silicon wafer;
- patterning and removing material from the first silicon wafer and layers on the first side of the first silicon wafer and from a second side of the first silicon wafer to make a plurality of pump-out ports through the first silicon wafer and layers on the first silicon wafer;
- masking and removing material from a first side of a second silicon wafer to form a plurality of recesses in the first side of the second silicon wafer;
- forming a sealing ring on the first side of the second silicon wafer around each of the plurality of recesses;
- and
- positioning the first side of the first silicon wafer next to the first side of the second silicon wafer;
- and
- wherein:
- each sealing ring is in contact with at least one of the layers on the first side of the first silicon layer;
- each recess of the plurality of recesses results in a chamber;
- each sealing ring encloses at least one pump-out port of the plurality of pump-out ports;
- and
- the first and second silicon wafers are effectively a bonded together set of wafers.
A method for making a wafer-pair having deposited layer plugged sealed chambers, comprising:
- growing a thermal layer on a first side of a first wafer;
- depositing a nitride layer on the thermal layer;
- depositing, patterning and removing portions of first metal layer on the nitride layer for a plurality of devices;
- depositing, patterning and removing portions of a second metal layer on the nitride and first metal layers for the plurality of devices;
- patterning and removing material from the first wafer and layers on the first side of the first wafer and from a second side of the first wafer to make a plurality of pump-out ports through the first wafer and layers on the first wafer;
- masking and removing material from a first side of a second wafer to form a plurality of recesses in the first side of the second wafer;
- forming a sealing ring on the first side of the second wafer around each of the plurality of recesses;
- and
- positioning the first side of the first wafer next to the first side of the second wafer;
- and wherein:
- each sealing ring is in contact with at least one of the layers on the first side of the first wafer;
- each recess of the plurality of recesses results in a chamber containing at least one device of the plurality of devices;
- each sealing ring encloses at least one pump-out port of the plurality of pump-out ports;
- and
- the first and second wafers are effectively a bonded together set of wafers.
A method for making a wafer-pair having at least one deposited layer plugged sealed chamber, comprising:
- growing a first thermal layer on a first side of a first wafer;
- depositing a nitride layer on the first thermal layer;
- depositing and patterning a first metal layer on the nitride layer for at least one device;
- depositing and patterning a second metal layer on the nitride layer and the first metal layer for the at least one device;
- patterning and removing material from the first wafer and layers on the first side of the first wafer and from a second side of the first wafer to make a pump-out port through the first wafer and the layers on the first wafer;
- masking and removing material from a first side of a second wafer, to form a recess in the first side of the second wafer;
- forming a sealing ring on the first side of the second wafer around the recess;
- positioning the first side of the first wafer next to the first side of the second wafer;
- and
- wherein:
- the sealing ring is in contact with at least one of the layers on the first side of the first wafer;
- the at least one device is within the recess resulting in a chamber containing the at least one device;
- the pump-out port is within the sealing ring;
- and
- the first and second wafers are effectively a bonded together set of wafers.
A method for making a wafer-pair having sealed chambers, comprising:
- patterning and removing material from a first wafer to make a plurality of pump-out ports through the first wafer;
- masking and removing material from a first side of a second wafer to form a plurality of recesses in the first side of the second wafer;
- forming a sealing ring on a first side of the first wafer or the first side of the second wafer such that the sealing ring extends around each of the plurality of recesses;
- and
- positioning the first side of the first wafer next to the first side of the second wafer;
- and
- wherein:
- each sealing ring is in contact with the first side of the first wafer and the first side of the second wafer
- each recess of the plurality of recesses results in a chamber;
- each sealing ring encloses at least one pump-out port of the plurality of pump-out ports;
- and
- the first and second wafers are effectively a bonded together set of wafers.
A method for making a wafer-pair with a sealed chamber therebetween, comprising:
- providing a first wafer and a second wafer;
- forming one or more pump-out ports through the first wafer;
- positioning a first side of the first wafer next to a first side of the second wafer, the first wafer and the second wafer forming at least part of a chamber, with the pump-out port of the first wafer in fluid communication with the chamber;
- and
- exposing the chamber to a negative pressure relative to atmosphere while plugging the pump out port to seal the chamber.
A method for making a wafer-pair with a sealed chamber therebetween, comprising:
- providing a first wafer and a second wafer;
- forming one or more pump-out ports through the first wafer;
- making a recess in a first side of the first wafer and/or a first side of the second wafer;
- positioning the first side of the first wafer next to the first side of the second wafer, the first wafer and the second wafer forming a chamber that is at least partially defined by the recess, with the pump-out port of the first wafer in fluid communication with the chamber;
- and
- exposing the chamber to a negative pressure relative to atmosphere while plugging the pump out port to seal the chamber.
A method for making a wafer-pair with a sealed chamber therebetween, comprising:
- providing a first wafer having a first side, with one or more bond pads on the first side;
- providing a second wafer;
- forming one or more bond-pad holes through the second wafer;
- positioning the first side of the first wafer next to a first side of the second wafer;
- the first wafer and the second wafer forming at least part of a chamber, the first wafer and second wafer being aligned so that the bond-pad holes in the second wafer provide physical access to the one or more bond pads on the first wafer through at least selected bond-pad holes in the second wafer;
- and
- the first and second wafers are effectively a bonded together set of wafers.
A bonded wafer pair, comprising:
- a first wafer;
- a second wafer;
- the first wafer having one or more pump-out ports through the first wafer;
- the first side of the first wafer bonded to a first side of the second wafer via a sealing ring;
- the first wafer, the second wafer and the sealing ring forming a chamber, with the pump-out port of the first wafer in fluid communication with the chamber, the chamber having a negative pressure therein relative to atmosphere;
- and
- a plug for plugging the pump out port.
A bonded wafer pair having a sealed chamber, comprising:
- a first wafer;
- a second wafer bonded to the first wafer;
- one or more pump-out ports through the first wafer;
- a recess in a first side of the first wafer and/or a first side of the second wafer;
- the first wafer and the second wafer forming a chamber that includes the recess, with the pump-out port of the first wafer in fluid communication with the chamber, the chamber having a negative pressure therein relative to atmosphere;
- and
- one or more plugs for plugging the one or more pump out ports to seal the chamber.
A bonded wafer pair, comprising:
- a first wafer having a first side, with one or more bond pads on the first side;
- a second wafer, with one or more bond-pad holes through the second wafer;
- the first side of the first wafer bonded to a first side of the second wafer with a sealing ring therebetween, the first wafer and second wafer being aligned so that the bond-pad holes in the second wafer provide physical access to the one or more bond pads on the first wafer through at least selected bond-pad holes in the second wafer;
- and
- the first wafer, the second wafer and the sealing ring forming a chamber.
A method for making a wafer-pair with a sealed chamber therebetween, comprising:
- providing a first wafer and a second wafer, the first wafer having a first side and a second side;
- forming one or more pump-out ports through the first wafer;
- positioning the first side of the first wafer next to a first side of the second wafer, the first wafer and the second wafer forming at least part of a chamber, with the pump-out port of the first wafer in fluid communication with the chamber;
- and
- providing one or more layer(s) in a negative pressure relative to atmosphere to a second side of the first wafer, wherein the one or more layer(s) plug the pump out port and seal the chamber.
An apparatus having a sealed chamber with one or more devices positioned in the sealed chamber, the one or more devices having a desired operating temperature range, the bonded wafer pair comprising:
- a first wafer;
- a second wafer secured relative to the first wafer;
- the first wafer and the second wafer forming a chamber that has a volume, wherein the one or more devices are positioned in the chamber;
- one or more pump-out ports through the first wafer, at least one of the one or more pump-out ports in fluid communication with the chamber;
- one or more plugs for plugging the one or more pump out ports to seal the chamber;
- and
- the volume of the chamber remaining relatively constant over the desired operating temperature range of the one or more devices.
A method for making a wafer-pair with a sealed chamber therebetween, comprising:
- providing a first wafer and a second wafer, the first wafer having a first side and a second side;
- forming one or more pump-out ports through the first wafer;
- positioning the first side of the first wafer next to a first side of the second wafer, the first wafer and the second wafer forming at least part of a chamber, with the pump-out port of the first wafer in fluid communication with the chamber;
- and
- providing one or more layer(s) by deposition to a second side of the first wafer, wherein the one or more deposited layer(s) plug the pump out port and seal the chamber, and wherein the one or more layer(s) are deposited by evaporation.
A method for making a wafer-pair with a sealed chamber therebetween, comprising:
- providing a first wafer and a second wafer, the first wafer having a first side and a second side;
- forming one or more pump-out ports through the first wafer;
- positioning the first side of the first wafer next to a first side of the second wafer, the first wafer and the second wafer forming at least part of a chamber, with the pump-out port of the first wafer in fluid communication with the chamber;
- and
- providing one or more layer(s) by deposition to a second side of the first wafer, wherein the one or more deposited layer(s) plug the pump out port and seal the chamber, and wherein the one or more layer(s) are deposited by sputtering.
Dependencies are inferred from the claim text.