Process for using bilayer photoresist
AssigneeInternational Business Machines Corporation
InventorsRobert David Allen, Donald Clifford Hofer, Ratnam Sooriyakumaran, Gregory Michael Wallraff
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Abstract
The invention relates to a process for forming bilayer resist images with a chemically-amplified, radiation-sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation-sensitive acid generator and a vinyl polymer having an acid-cleavable silylethoxy group and (ii) an organic underlayer. The bilayer resist is used in the manufacture of integrated circuits.
Claims81
A process for generating a bilayer resist image on a substrate, comprising the steps of:
- (a) coating a substrate with an organic underlayer;
- (b) coating the organic underlayer with a top layer comprising
- (i) a radiation sensitive acid generator, and
- (ii) a polymer formed by polymerizing a C5-20 cyclic olefin monomer optionally in combination with one or more additional monomers selected from the group consisting of acrylate, methacrylate, hydroxystyrene optionally substituted with C1-6 alkyl, and combinations thereof, the polymer having an acid-cleavable silylethoxy group attached thereto wherein the ethoxy portion of the silylethoxy group is optionally substituted with C1-6 alkyl, phenyl, or benzyl;
- (c) imagewise exposing the top layer to radiation;
- (d) developing the image in the top layer;
- and
- (e) transferring the image through the organic underlayer to the substrate.
A process of generating a bilayer resist image on a substrate comprising the steps of:
- (a) coating a substrate with an organic underlayer;
- (b) coating the organic underlayer with a top layer comprising
- (i) a radiation-sensitive acid generator,
- (ii) a polymer formed by polymerizing a C5-20 cyclic olefin monomer optionally in combination with one or more additional monomers selected from the group consisting of acrylate, methacrylate, hydroxystyrene optionally substituted with C1-6 alkyl, and combinations thereof, and
- (iii) a compound having an acid-cleavable silylethoxy group;
- (c) imagewise exposing the top layer to radiation;
- (d) developing the image in the top layer;
- and
- (c) transferring the image through the organic underlayer to the substrate.
A process for generating a bilayer resist image on a substrate, comprising the steps of:
- (a) coating a substrate with an organic underlayer;
- (b) coating the organic underlayer with a top layer comprising
- (i) a radiation sensitive acid generator, and
- (ii) a polymer formed by polymerizing one or more monomers selected from the group consisting of acrylate, methacrylate, hydroxystyrene optionally substituted with C1-6 alkyl, C5-20 cyclic olefin monomers, and combinations thereof, the polymer having acid-cleavable moieties bound thereto, wherein all such moieties are silylethoxy groups optionally substituted on the ethoxy portion thereof with C1-6 alkyl, phenyl, or benzyl;
- (c) imagewise exposing the top layer to radiation;
- (d) developing the image in the top layer;
- and
- (e) transferring the image through the organic underlayer to the substrate.
A process for generating a bilayer resist image on a substrate, comprising the steps of:
- (a) coating a substrate with an organic underlayer, ;
- (b) coating the organic underlayer with a top layer comprising a radiation-sensitive acid generator and a polymer formed by copolymerizing (i) hydroxystyrene optionally substituted with C1-6 alkyl with (ii) a second monomer selected from the group consisting of acrylic acid and methacrylic acid substituted with an acid-cleavable silylethoxy group, wherein the ethoxy portion of the silylethoxy group is substituted with 0 to 4 C1-6 alkyl, phenyl, or benzyl groups, and, optionally, with (iii) a third monomer optionally substituted with an acid-cleavable group;
- (c) imagewise exposing the top layer to radiation;
- (d) developing the image in the top layer;
- and
- (e) transferring the image through the organic underlayer to the substrate.
A process for preparing a composition useful as an upper layer in a bilayer resist, comprising:
- admixing (a) a radiation sensitive acid generator and (b) a polymer comprising C5-20 cyclic olefin monomer and optionally one or more additional monomers selected from the group consisting of acrylate, methacrylate, hydroxystyrene optionally substituted with C1-6 alkyl, and combinations thereof, said polymer having an acid-cleavable silylethoxy group attached thereto wherein the ethoxy portion of the silylethoxy group is optionally substituted with C1-6 alkyl, phenyl, or benzyl.
A process for preparing a composition useful as an upper layer in a bilayer resist, said process comprising:
- admixing (a) a radiation sensitive acid generator, (b) a polymer comprising C5-20 cyclic olefin monomer and optionally one or more additional monomers selected from the group consisting of acrylate, methacrylate, hydroxystyrene optionally substituted with C1-6 alkyl, and combinations thereof, and (c) a compound having an acid-cleavable silylethoxy group.
A process for preparing a composition useful as an upper layer in a bilayer resist, comprising the steps of:
- admixing (a) a radiation sensitive acid generator and (b) a polymer comprising (i) hydroxystyrene optionally substituted with C1-6 alkyl, (ii) a second monomer selected from the group consisting of acrylic acid and methacrylic acid substituted with an acid-cleavable silylethoxy group, wherein the ethoxy portion of the silylethoxy group is substituted with 0 to 4 C1-6 alkyl, phenyl, or benzyl groups, and (iii) a third monomer substituted with an acid-cleavable group.
A composition useful as an upper layer in a bilayer resist, comprising:
- (a) a radiation sensitive acid generator, and
- (b) a polymer comprising a C5-20 cyclic olefin monomer and optionally one or more additional monomers selected from the group consisting of acrylate, methacrylate, hydroxystyrene optionally substituted with C1-6 alkyl, and combinations thereof, said polymer having an acid-cleavable silylethoxy group attached thereto wherein the ethoxy portion of the silylethoxy group is optionally substituted with C1-6 alkyl, phenyl, or benzyl.
A composition useful as an upper layer in a bilayer resist, comprising:
- (a) a radiation sensitive acid generator, and
- (b) a polymer comprising a C5-20 cyclic olefin monomer and optionally one or more monomers selected from the group consisting of acrylate, methacrylate, hydroxystyrene optionally substituted with C1-6 alkyl, and combinations thereof, and
- (c) a compound having an acid-cleavable silylethoxy group.
A composition useful as an upper layer in a bilayer resist, said composition comprising:
- (a) a radiation sensitive acid generator;
- and
- (b) a polymer comprising
- (i) hydroxystyrene optionally substituted with C1-6 alkyl,
- (ii) a second monomer selected from the group consisting of acrylic acid and methacrylic acid substituted with an acid-cleavable silylethoxy group, wherein the ethoxy portion of the silylethoxy group is substituted with 0 to 4 C1-6 alkyl, phenyl, or benzyl groups, and
- (iii) a third monomer substituted with an acid-cleavable group.
Dependencies are inferred from the claim text.