Method for repeatable temperature measurement using surface reflectivity

A method for continuously measuring the temperature of a semiconductor substrate, comprising the steps of:

• providing a substrate in a chamber, said substrate comprising a layer, said layer having a reflective surface;
• forming a film superjacent said surface;
• comparing the reflectivity of said surface prior to forming said film and while said film is forming;
• and
• exposing said surface to radiant energy, said energy having a power level, said power level responsive to said compared reflectivities.

A method for externally measuring the continuous temperature of a semiconductor substrate in chamber, comprising the steps of:

• providing a substantially clean semiconductor substrate in said chamber, said substrate having a layer superjacent said substrate, said layer having a reflective surface;
• forming a film superjacent said surface by introducing a gas and photon energy in situ, said gas comprising at least one of N.sub.2, NH.sub.3, O.sub.2 and N.sub.2 O, said energy generating a temperature substantially within the range of 500.degree. C. to 1250.degree. C., said energy substantially in the absorption band of silicon;
• measuring the reflectivity of said surface prior to said forming and continuously during said forming until said film is substantially formed;
• and
• exposing said substrate to said photon energy, said energy having a power level, said power level responsive to the measured reflectivities of said film.

A method for measuring the temperature of a semiconductor substrate, comprising:

• providing a substrate in a chamber, said substrate comprising a layer, said layer having a reflective surface;
• exposing said reflective surface to radiant energy, said energy having a power level;
• forming a film over said reflective surface;
• and
• controlling said power level responsive to comparing the reflectivity of said reflective surface prior to forming said film and while said film is
• forming.

A method for externally measuring the continuous temperature of a semiconductor substrate in a chamber, comprising:

• providing a substantially clean semiconductor substrate having a layer over said substrate, said layer having a reflective surface;
• forming a film over said layer by exposing said layer to a gas and photon energy, said gas comprising at least one of N.sub.2, NH.sub.3, O.sub.2 and N.sub.2 O, said energy generating a temperature substantially within the range of 500.degree. C. to 1250.degree. C., said energy substantially in the absorption band of silicon;
• measuring the reflectivity of said surface prior to said forming and continuously during said forming until said film is substantially formed;
• and
• controlling a power level of said photon energy responsive to said measured reflectivities.

A method for controlling the temperature of a semiconductor substrate having a reflective surface comprising:

• exposing the reflective surface to radiant energy, said energy having a power level;
• sensing changes in reflectivity of the reflective surface while a layer is formed on the reflective surface;
• and
• controlling said power level in response to said sensed changes in reflectivity.

A method for controlling the temperature of a semiconductor substrate, comprising:

• providing a semiconductor substrate having a reflective surface;
• forming a film on said reflective surface by introducing a first gas and photon energy;
• measuring the reflectivity of said reflective surface prior to said forming and during said forming until said film is substantially formed;
• and
• controlling a power level of said photon energy in response to said measured reflectivity.

A method for controlling the temperature of a semiconductor substrate having a reflective surface, comprising:

• forming a film over said surface;
• exposing said reflective surface to radiant energy, said energy having a power level;
• measuring the reflectivity of said reflective surface prior to forming said film and while said film is forming;
• and
• controlling said power level in response to said measured reflectivities.