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US RE35,614 EGranted
Process for improved quality of CVD copper films
AssigneeAir Products and Chemicals, Inc.
InventorsJohn A. T. Norman, Arthur K. Hochberg, David A. Roberts
Life of this patent
Estimating the term…
Abstract
Chemical Vapor Deposition of copper films is enhanced by simultaneously introducing in the reactor vapor of an organometalic copper precursor and ..copper complex.!. vapor of a volatile ligand or the hydrate of the ligand.
Claims7
A method for chemical vapor deposition or copper films on a substrate comprising the steps of:
- introducing vapors of a copper (I) organometallic precursor compound into a chemical vapor deposition (CVD) reactor;
- and
- simultaneously introducing into the reactor ..copper complex.!. vapor or a volatile ligand or ..ligand.!. hydrate of a ligand having the general formula, ##STR3## wherein R.sub.1, and R.sub.3, are selected from the group consisting of alkyl, aryl, fluoroalkyl or fluoroaryl, R.sub.2 is a hydrogen, halogen, fluoroalkyl or fluoroaryl, X and Y are selected so that when X.dbd...0.!. O , Y is OH, NH.sub.2 or N(R.sub.4)H, when X.dbd.NH, Y is NH.sub.2 or N(R.sub.4)H, when X.dbd.NR.sub.5, Y is N (R.sub.4)H, and R.sub.4 and R.sub.5 are selected from the group consisting of alkyl, aryl, fluoroalkyl and fluoroaryl.
A method for chemical vapor deposition of copper films on a substrate comprising the steps of:
- introducing vapor of 1,1,1,5,5,5-hexafluoro-2,4pentanedianato copper (I) trimethylvinylsilane into a chemical vapor depositor reactor;
- and simultaneously introducing into the reactor ..copper complex.!. vapor of 1,1,1,5,5,5-hexafluoro-2,4-pentanedione.
Dependencies are inferred from the claim text.