# US RE32,928 E · Process and material for manufacturing semiconductor devices

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- Number: US RE32,928 E
- Document ID: USRE32928E
- Status: Granted
- Kind: E
- Application number: 05/194,539
- Filed: 1978-06-12
- Granted: 1989-05-23
- Earliest claimed: 1972-05-12
- Assignees: LFE Corporation
- Inventors: Adir Jacob
- Web page: https://patentgrep.com/patent/USRE32928E

## Abstract

A process step and material for use in the manufacture of semiconductor devices. To facilitate the removal of organic photoresist material from a substrate, the material is exposed to a low pressure rf generated "cold" plasma (under 32.degree. C.) produced from a homogeneous gaseous binary mixture of oxygen and a halocarbon, where the halocarbon is preferably a gas having one carbon atom per molecule and fully fluorine-substituted, and wherein the mixture contains at least 25% of oxygen by volume.

## Claims

### Claim 1

A process for removing organic photoresist material from a substrate in a plasma environment, comprising the step of:
exposing the material to a gaseous plasma formed from a binary mixture of oxygen and a halocarbon having no more than two carbon atoms per molecule, wherein at least one carbon atom in said molecule is linked to a predominance of fluorine atoms, and wherein oxygen constitutes at least 25% by volume of said binary mixture.

### Claim 2 (depends on 1)

A process in accordance with claim 1 wherein said halocarbon and said oxygen are supplied to a reactor from a common premixed source.

### Claim 3 (depends on 1)

A process in accordance with claim 1 wherein said halocarbon is trifluoromethane.

### Claim 4 (depends on 1)

A process in accordance with claim 1 wherein said halocarbon is tetrafluoromethane.

### Claim at position 5

[5. A composition of matter useful for stripping organic photoresist material from a substrate in a plasma environment, said composition comprising a binary gaseous mixture of oxygen and a halocargon having no more than two carbon atoms per molecule, wherein at least one carbon atom in said molecule is linked to a predominance of fluorine atoms and wherein said oxygen comprises at least 25% by volume of said binary gaseous mixture]

### Claim at position 6 (depends on 5)

[6. A composition of matter in accordance with claim 5 wherein said halocarbon is trifluoromethane.]

### Claim at position 7 (depends on 5)

[7. A composition of matter in accordance with claim 5 wherein said halocarbon is tetrafluoromethane.]