Magnetic shunt device for hall effect applications

A magnetic shunt device for use in a Hall effect sensor wherein the Hall effect sensor includes a Hall effect element and a pair of magnetic devices, the magnetic devices being positioned in opposed relationship to each other and generating a magnetic field, the Hall effect element being positioned and located between the pair of opposed magnetic devices and having a sensitive plane which is affected by the magnetic field generated by said magnetic devices, said pair of magnetic devices being rotatable about the Hall effect element between a first position wherein the magnetic field generated by said magnetic devices is parallel to the sensitive plane of the Hall effect element, and a second position angularly related thereto, said shunt device being positioned and located so as to null the affect of the magnetic field on the sensitive plane of the Hall effect element when the magnetic devices are located at their first position, and said shunt device exposing the sensitive plane of the Hall effect element to the affects of the magnetic field when the magnetic devices are located at their second position.

A magnetic shunt device for use in a Hall effect sensor wherein the Hall effect sensor includes a Hall effect transducer and a pair of magnetic devices, said pair of magnetic devices being positioned in opposed relationship to each other and each generating a magnetic field, the Hall effect transducer being positioned and located between said opposed pair of magnetic devices and having a sensitive plane which is influenced by the magnetic field generated by said pair of magnetic devices, said pair of magnetic devices being rotatable about the Hall effect transducer in the range of

• −90 °[[90°
• where is the angle between the magnetic field generate by said pair of magnetic devices and the direction of current flow through the Hall effect transducer, said magnetic shunt device shielding the sensitive plane of the Hall effect transducer from the influence of the magnetic field when =0° and exposing the sensitive plane of the Hall effect transducer to the influence of the magnetic field when
• 0 <[90° and when −90°[<0.

A magnetic shunt device for use in a Hall effect sensor wherein the Hall effect sensor includes a Hall effect transducer and a pair of magnetic devices, said pair of magnetic devices being positioned in opposed relationship to each other and each generating a magnetic field, the Hall effect transducer being positioned and located between said opposed pair of magnetic devices and having a sensitive plane which is influenced by the magnetic field generated by said pair of magnetic devices, said pair of magnetic devices being rotatable about the Hall effect transducer in the range of

• −180 °[[180 °0
• where is the angle between the magnetic field generate by said pair of magnetic devices and the direction of current flow through the Hall effect transducer, said magnetic shunt device shielding the sensitive plane of the Hall effect transducer from the influences of the magnetic field when =0° and when =!180°, and said magnetic shunt device exposing the sensitive plane of the Hall effect transducer to the influence of the magnetic field when
• 0<[180° and when−180°[<0.