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US D710,318 S1Granted
Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorsShuangching Chen, Akira Iso, Takashi Hyakutake, Syougo Ogawa, Syuuji Miyashita
Life of this patent
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Abstract
The abstract isn’t available for this document.
Claims1
The ornamental design for a semiconductor device, as shown and described.