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US 9,991,138 B2Granted
Etching method and etching apparatus
AssigneeTokyo Electron Limited
InventorsJun Lin, Koji Takeya, Mitsuhiro Tachibana, Akifumi Yao, Kunihiro Yamauchi, Tatsuo Miyazaki
Life of this patent
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Abstract
An etching method includes a step of etching a cobalt film formed on a surface of a target object by supplying an etching gas containing β-diketone and an oxidizing gas for oxidizing the cobalt film to the target object. The supply of the etching gas and the oxidizing gas is carried out such that a flow rate ratio of the oxidizing gas to the etching gas is ranging from 0.5% to 50% while heating the target object to a temperature lower than or equal to 250° C.
Claims6
An etching method comprising:
- supplying a target object with an oxidizing gas to oxidize a cobalt film formed on a surface of the target object;
- and
- etching the oxidized cobalt film by supplying an etching gas containing β-diketone and a decomposition suppressing gas for suppressing decomposition of the etching gas,
- wherein the decomposition suppressing gas is at least one gas selected from the group consisting of hydrogen gas, NH3 gas, and H2S gas.
1 more element
An etching method comprising:
- non-plasma etching a cobalt film formed on a surface of a target object by supplying nitrogen monoxide gas for oxidizing the cobalt film and an etching gas containing β-diketone to the target object such that a flow rate ratio of the nitrogen monoxide gas to the etching gas ranges from 0.5% to 50%,
- wherein the target object is heated during the etching to a temperature lower than or equal to 250° C., thereby preventing a formation of a carbon film by suppressing a decomposition of the etching gas.
An etching method comprising:
- supplying a target object with an oxidizing gas to oxidize a cobalt film formed on a surface of the target object;
- and
- etching the oxidized cobalt film by supplying a hydrogen containing gas and an etching gas containing β-diketone,
- wherein the hydrogen-containing gas is at least one gas selected from the group consisting of hydrogen gas, NH3 gas, and H2S gas.
1 more element
Dependencies are inferred from the claim text.