Semiconductor device and related manufacturing method
AssigneeSemiconductor Manufacturing International (Shanghai) Corporation
InventorDeyuan Xiao
Life of this patent
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Abstract
A semiconductor device may include the following elements: a semiconductor substrate, an insulator positioned on the substrate, a source electrode positioned on the insulator, a drain electrode positioned on the insulator, a gate electrode positioned between the source electrode and the drain electrode, a hollow channel surrounded by the gate electrode and positioned between the source electrode and the drain electrode, a dielectric member positioned between the hollow channel and the gate electrode, a first insulating member positioned between the gate electrode and the source electrode, and a second insulating member positioned between the gate electrode and the drain electrode.
Claims8
A semiconductor device comprising:
- a semiconductor substrate;
- an insulator positioned on the substrate;
- a source electrode positioned on the insulator;
- a drain electrode positioned on the insulator;
- a gate electrode positioned between the source electrode and the drain electrode;
- a hollow channel surrounded by the gate electrode and positioned between the source electrode and the drain electrode;
- a dielectric member positioned between the hollow channel and the gate electrode;
- a first insulating member positioned between the gate electrode and the source electrode;
- and
- a second insulating member positioned between the gate electrode and the drain electrode.
Dependencies are inferred from the claim text.