Method of manufacturing semiconductor device with glass pieces

A method of manufacturing a semiconductor device, the method comprising:

• forming a semiconductor element in a mesa portion of a semiconductor substrate,
• wherein the semiconductor element is one of a transistor, a diode, a field effect transistor, an IGBT, a logic circuit, a driver circuit, a processor circuit and a memory circuit;
• forming a cavity in a working surface of the semiconductor substrate;
• bringing the semiconductor substrate in contact with a glass piece made of a glass material and having a protrusion, wherein the glass piece and the semiconductor substrate are arranged such that the protrusion extends into the cavity;
• and
• bonding the glass piece to the semiconductor substrate,
• wherein forming the glass piece comprises:
• forming a mold substrate of a single-crystalline material by etching a sharp-angled cavity into a working surface of the mold substrate;
• bringing a source material based on a glass in contact with the working surface provided with the sharp-angled cavity, wherein the source material is a powder, a glass frit, includes pellets, or is a disk with a flat surface;
• and
• pressing the source material and the mold substrate against each other, wherein if the source material is a disk, the disk is pressed with the flat surface against the working surface of the mold substrate, and wherein a temperature of the source material and a force exerted on the source material are controlled such that source material is fluidified and flows into the sharp-angled cavity,
• wherein the sharp angles of the sharp angled cavity are disposed below the working surface.