Method for self-aligned solder reflow bonding and devices obtained thereof

A method for producing a stack of semiconductor devices, the method comprising:

• providing a first semiconductor device, the first semiconductor device comprising:
• a dielectric layer with an exposed upper surface, a hole through the dielectric layer, a sidewall and a bottom of the hole lined with a metal layer, a solder material on the metal layer partially filling the metal lined hole from the bottom upward thereby forming a solder hole;
• providing a second semiconductor device, the second semiconductor device comprising:
• a compliant layer with an exposed main surface, a metal protrusion through the compliant layer and the metal protrusion further extending perpendicular from the exposed main surface, a capping layer covering the metal protrusion and separating the metal protrusion from the compliant layer;
• mounting the second semiconductor device on the first semiconductor device by landing the metal protrusion in the solder hole, and contacting the solder material with the capping layer, wherein after mounting, the exposed main surface of the compliant layer is spaced from the exposed upper surface of the dielectric layer;
• and
• after mounting the second semiconductor device on the first semiconductor device, reflowing the solder material, thereby filling the hole with reflowed material, wherein after reflowing the first semiconductor device and the second semiconductor device are bonded and the main surface of the compliant layer is contacting the upper surface of the dielectric layer.