Ternary tungsten boride nitride films and methods for forming same
AssigneeLam Research Corporation
InventorsWei Lei, Juwen Gao
Life of this patent
Estimating the term…
Abstract
Ternary tungsten boride nitride (WBN) thin films and related methods of formation are provided. The films are have excellent thermal stability, tunable resistivity and good adhesion to oxides. Methods of forming the films can involve thermal atomic layer deposition (ALD) processes in which boron-containing, nitrogen-containing and tungsten-containing reactants are sequentially pulsed into a reaction chamber to deposit the WBN films. In some embodiments, the processes include multiple cycles of boron-containing, nitrogen-containing and tungsten-containing reactant pulses, with each cycle including multiple boron-containing pulses.
Claims15
A method comprising:
- performing multiple cycles of sequentially introducing pulses of a boron-containing reactant, a nitrogen-containing reactant and a tungsten-containing reactant into a reaction chamber containing a semiconductor substrate to thereby deposit a ternary tungsten boride nitride film on the substrate, wherein the ternary tungsten boride nitride film contains tungsten-boron bonds and tungsten-nitrogen bonds, wherein a ratio of the number of boron-containing reactant pulses to the number of tungsten-containing reactant pulses introduced during the multiple cycles is at least three, and wherein the boron-containing reactant reduces the tungsten-containing reactant to form tungsten and provides boron to form the ternary tungsten boride nitride film.
Dependencies are inferred from the claim text.