Insulated gate bipolar transistor driving circuit

An insulated gate bipolar transistor (IGBT) driving circuit, comprising:

• an optocoupler chip;
• and
• a power amplification circuit,
• wherein:
• the optocoupler chip comprises an isolation amplification unit and a fault protection unit, and the fault protection unit comprises a desaturation module and a fault feedback module,
• the isolation amplification unit is configured to carry out optoelectric isolation on an external driving signal inputted by an external controller and amplify the isolated external driving signal so as to obtain an IGBT driving signal,
• the power amplification circuit is configured to carry out power amplification on the IGBT driving signal and output the amplified IGBT driving signal to a gate electrode of an IGBT,
• the desaturation module is configured to transmit a warning signal to the fault feedback module when detecting that a potential of a collector of the IGBT is overhigh or the potential of the collector of the IGBT changes overfast,
• the fault feedback module is configured to transmit a fault control signal to the external controller after receiving the warning signal so as to control the external driving signal outputted by the external controller and enable the isolation amplification unit to output an IGBT driving signal for controlling the IGBT to be turned off,
• the power amplification circuit comprises a push-pull power amplification unit,
• the push-pull power amplification unit comprises:
• a first transistor, a gate electrode of which is connected to the IGBT driving signal, a first electrode of which is connected to a first voltage, and a second electrode of which is connected to the gate electrode of the IGBT,
• a second transistor, a gate electrode of which is connected to the IGBT driving signal, a first electrode of which is connected to a second voltage, and a second electrode of which is connected to the gate electrode of the IGBT,
• a first resistor, which is connected between the gate electrode of the first transistor and the second electrode of the first transistor, and
• a first capacitor, which is connected between the gate electrode of the second transistor and the first electrode of the second transistor, and
• the power amplification circuit further comprises:
• a second resistor, which is connected between an IGBT driving signal output end of the optocoupler chip and the gate electrode of the first transistor,
• a third resistor, which is connected between the second electrode of the first transistor and the gate electrode of the IGBT,
• a fourth resistor, which is connected between the first electrode of the second transistor and the second electrode of the second transistor,
• a voltage regulator, which is connected between the gate electrode of the IGBT and the ground, and configured to stabilize the amplified IGBT driving signal, and
• a first filter which is connected between the gate electrode of the IGBT and the ground, and configured to filter the amplified IGBT driving signal.