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US 9,960,572 B2Granted
Semiconductor device
AssigneeFurukawa Electric Co., Ltd.
InventorsMasayuki Iwami, Hirotatsu Ishii, Norihiro Iwai, Takeyoshi Matsuda, Akihiko Kasukawa, Takuya Ishikawa, Yasumasa Kawakita, Eisaku Kaji
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Abstract
A semiconductor device includes a semiconductor layer formed of a III-V group semiconductor crystal containing As as a primary component of a V group. A V group element other than As has been introduced at a concentration of 0.02 to 5% into a V group site of the III-V group semiconductor crystal in the semiconductor layer.
Claims2
A semiconductor device comprising:
- an active layer formed of a III-V group semiconductor crystal including As as a primary component of a V group, wherein
- a <110> dumbbell formed of As is formed in the active layer,
- the active layer is a quantum well structure layer including a well layer and a barrier layer, and
- P has been introduced at a concentration of 0.02 to 3% into a V group site of the III-V group semiconductor crystal in the well layer and the barrier layer to stabilize the <110> dumbbell.
1 more element
Dependencies are inferred from the claim text.