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US 9,960,567 B2Granted
Laser device integrated with semiconductor optical amplifier on silicon substrate
AssigneeSamsung Electronics Co., Ltd.
InventorTaek Kim
Life of this patent
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Abstract
A laser device includes a silicon substrate, a buffer layer on the silicon substrate, a laser cavity on the buffer layer including a first active region based on group III-V semiconductor quantum dots, and a semiconductor optical amplifier that is integrated with the laser cavity on the buffer layer, includes a second active region based on group III-V semiconductor quantum dots, and amplifies light emitted from the laser cavity.
Claims23
A laser device comprising:
- a silicon substrate;
- a buffer layer on the silicon substrate;
- a laser cavity on the buffer layer, the laser cavity including a first active region including group III-V semiconductor quantum dots, and a front mirror region and a rear mirror region at both sides of the first active region, the front mirror region and the rear mirror region being spaced apart from each other in a direction parallel to the buffer layer;
- and
- a semiconductor optical amplifier integrated with the laser cavity on the buffer layer and having a second active region including group III-V semiconductor quantum dots, and configured to amplify light emitted from the laser cavity.
2 more elements
A laser device comprising:
- a silicon substrate;
- a buffer layer on the silicon substrate;
- a laser cavity on the buffer layer, the laser cavity including a first active region including group III-V semiconductor quantum dots;
- a semiconductor optical amplifier integrated with the laser cavity on the buffer layer and having a second active region including group III-V semiconductor quantum dots, and configured to amplify light emitted from the laser cavity;
- and
- a grating mirror in the second active region, the grating mirror forming an extended cavity having a resonant length greater than a resonant length of the laser cavity.
3 more elements
A laser device comprising:
- a silicon substrate;
- a buffer layer on the silicon substrate;
- a laser cavity on the buffer layer, the laser cavity including a first active region including group III-V semiconductor quantum dots;
- and
- a semiconductor optical amplifier integrated with the laser cavity on the buffer layer and having a second active region including group III-V semiconductor quantum dots, and configured to amplify light emitted from the laser cavity,
- wherein the laser cavity comprises a plurality of laser cavities configured to generate light, the plurality of laser cavities having different wavelength bands,
- wherein the laser device further comprises:
- a plurality of waveguides configured to respectively guide the light emitted from the plurality of laser cavities;
- and
- a coupler configured to couple the light guided by the plurality of waveguides.
7 more elements
Dependencies are inferred from the claim text.